Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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NVMFS5C604NT1GNFET SO8FL 60V 287A 1.2MO |
1,445 |
|
![]() Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 10 V | 40A (Ta), 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 6400 pF @ 25 V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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G3F135MT12J-TR1200V 135M TO-263-7 G3F SIC MOSF |
800 |
|
![]() Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 18A (Tc) | 18V | 180mOhm @ 8A, 18V | 4.3V @ 5mA | 27 nC @ 18 V | +22V, -10V | 575 pF @ 800 V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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PJMF099N60EC_T0_00601600V/ 99M / 39A/ EASY TO DRIVER |
2,000 |
|
![]() Техническая документация |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 39A (Tc) | 10V | 99mOhm @ 19.5A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±30V | 2568 pF @ 400 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220AB-F |
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RX3R10BBHC16NCH 150V 105A, TO-220AB, POWER M |
988 |
|
![]() Техническая документация |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 105A (Tc) | 6V, 10V | 8.8mOhm @ 50A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±20V | 7550 pF @ 75 V | - | 181W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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NVHL065N65S3FSUPERFET3 650V TO247 |
398 |
|
![]() Техническая документация |
SuperFET® III, FRFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 46A (Tc) | 10V | 65mOhm @ 23A, 10V | 5V @ 1.3mA | 98 nC @ 10 V | ±30V | 4075 pF @ 400 V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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IMZA65R060M2HXKSA1IMZA65R060M2HXKSA1 |
400 |
|
![]() Техническая документация |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 32.8A (Tc) | 15V, 20V | 55mOhm @ 15.4A, 20V | 5.6V @ 3.1mA | 19 nC @ 18 V | +23V, -7V | 669 pF @ 400 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-8 |
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R6086YNZC17NCH 600V 33A, TO-3PF, POWER MOSF |
300 |
|
![]() Техническая документация |
- | TO-3P-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V, 12V | 44mOhm @ 17A, 12V | 6V @ 4.6mA | 110 nC @ 10 V | ±30V | 5100 pF @ 100 V | - | 114W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PF |
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NTBLS002N08MCMOSFET N-CH 80V 28A/238A 8HPSOF |
2,000 |
|
![]() Техническая документация |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 28A (Ta), 238A (Tc) | 6V, 10V | 2mOhm @ 80A, 10V | 4V @ 530µA | 92 nC @ 10 V | ±20V | 6580 pF @ 40 V | - | 2.9W (Ta), 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-HPSOF |
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PSMNR90-80ASEJPSMNR90-80ASE/SOT8000A/CCPAK12 |
250 |
|
![]() Техническая документация |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 495A (Tc) | 10V | 0.9mOhm @ 25A, 10V | 3.6V @ 1mA | 504 nC @ 10 V | ±20V | 36802 pF @ 40 V | - | 1.55kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212 |
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AIMZA75R090M1HXKSA1AUTOMOTIVE_SICMOS |
229 |
|
![]() Техническая документация |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 23A (Tj) | 15V, 20V | 83mOhm @ 7.4A, 20V | 5.6V @ 2.6mA | 15 nC @ 18 V | +23V, -5V | 542 pF @ 500 V | - | 113W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
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NTH4L023N065M3SSIC MOS TO247-4L 23MOHM 650V M3S |
458 |
|
![]() Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | 15V, 18V | 33mOhm @ 20A, 18V | 4V @ 10mA | 69 nC @ 18 V | +22V, -8V | 1952 pF @ 400 V | - | 245W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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SCT3160KWAHRTL1200V, 17A, 7-PIN SMD, TRENCH-ST |
1,000 |
|
![]() Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42 nC @ 18 V | +22V, -4V | 398 pF @ 800 V | - | - | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7LA |
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IMBG40R025M2HXTMA1SIC-MOS |
900 |
|
![]() Техническая документация |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 9A (Ta), 68A (Tc) | 15V, 18V | 32.1mOhm @ 15.7A, 18V | 5.6V @ 5.6mA | 36 nC @ 18 V | +23V, -7V | 1690 pF @ 200 V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-11 |
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SCT3105KRC151200V, 24A, 4-PIN THD, TRENCH-ST |
370 |
|
![]() Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 24A (Tj) | 18V | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | +22V, -4V | 574 pF @ 800 V | - | 134W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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AIMCQ120R080M1TXTMA1SIC_DISCRETE |
770 |
|
![]() Техническая документация |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 34A (Tc) | 18V, 20V | 100mOhm @ 10A, 20V | 5.1V @ 3.3mA | 24 nC @ 20 V | +25V, -10V | 671 pF @ 800 V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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STB28NM60NDMOSFET N-CH 600V 23A D2PAK |
1,427 |
|
![]() Техническая документация |
FDmesh™ II | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 150mOhm @ 11.5A, 10V | 5V @ 250µA | 62.5 nC @ 10 V | ±25V | 2090 pF @ 100 V | - | 190W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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G3F60MT06J-TR650V 55M TO-263-7 G3F SIC MOSFET |
800 |
|
![]() Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 44A (Tc) | 15V, 18V | 75mOhm @ 15A, 18V | 4.3V @ 7mA | 45 nC @ 18 V | +22V, -10V | 1322 pF @ 400 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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PJMH074N60FRCH_T0_00601600V/ 74M / 53A/ FAST RECOVERY Q |
1,491 |
|
![]() Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 53A | 10V | - | - | 84 nC @ 10 V | ±30V | - | - | - | - | - | - | Through Hole | TO-247AD |
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SIHP054N65E-GE3E SERIES POWER MOSFET TO-220AB, |
1,037 |
|
![]() Техническая документация |
E | TO-220-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 58mOhm @ 20A, 10V | 5V @ 250µA | 108 nC @ 20 V | ±30V | 3769 pF @ 100 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IPDQ60R035CFD7XTMA1HIGH POWER_NEW PG-HDSOP-22 |
750 |
|
![]() Техническая документация |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HDSOP-22-1 |