Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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AOK060V65X2650V SILICON CARBIDE MOSFET |
240 |
|
![]() Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 29A (Tc) | 15V | 80mOhm @ 6A, 15V | 3.5V @ 6mA | 39.4 nC @ 15 V | +15V, -5V | 1165 pF @ 400 V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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AOM060V65X2650V SILICON CARBIDE MOSFET |
240 |
|
![]() Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 29A (Tc) | 15V | 80mOhm @ 6A, 15V | 3.5V @ 6mA | 39.4 nC @ 15 V | +15V, -5V | 1165 pF @ 400 V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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SIHF074N65E-GE3E SERIES POWER MOSFET TO-220 FUL |
988 |
|
![]() Техническая документация |
E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | 10V | 79mOhm @ 15A, 10V | 5V @ 250µA | 80 nC @ 10 V | ±30V | 2904 pF @ 100 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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FCMT080N65S3MOSFET N-CH 650V 38A 4TDFN |
3,000 |
|
![]() Техническая документация |
SuperFET® III | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Tc) | 10V | 80mOhm @ 19A, 10V | 4.5V @ 880µA | 71 nC @ 10 V | ±30V | 2765 pF @ 400 V | - | 260W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-TDFN (8x8) |
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SICW400N170A-BPMOSFET N-CH 1700V 6A TO247AB |
1,795 |
|
![]() Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 6A (Tc) | 16V, 20V | 500mOhm @ 3A, 20V | 4.5V @ 5mA | 31 nC @ 20 V | +25V, -5V | 333 pF @ 1000 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
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NTBG032N065M3SSIC MOS D2PAK-7L 32MOHM 650V M3S |
615 |
|
![]() Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 52A (Tc) | 15V, 18V | 44mOhm @ 15A, 18V | 4V @ 7.5mA | 55 nC @ 18 V | +22V, -8V | 1409 pF @ 400 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7 |
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PSMN015N10NS2_R2_00201100V/ 1.5M / TOLL FOR ESS/ BBU/ |
1,484 |
|
![]() Техническая документация |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 395A | 4.5V, 10V | - | - | 128 nC @ 10 V | ±20V | - | - | - | - | - | - | Surface Mount | TOLL |
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IMT40R025M2HXTMA1SIC-MOS |
1,988 |
|
![]() Техническая документация |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 9A (Ta), 68A (Tc) | 15V, 18V | 32.1mOhm @ 15.7A, 18V | 5.6V @ 5.6mA | 36 nC @ 18 V | +23V, -7V | 1690 pF @ 200 V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
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IMZA75R060M1HXKSA1SILICON CARBIDE MOSFET |
238 |
|
![]() Техническая документация |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 32A (Tc) | 15V, 20V | 55mOhm @ 11.1A, 20V | 5.6V @ 4mA | 23 nC @ 18 V | +23V, -5V | 779 pF @ 500 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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AOK150V120X2Q1200V SILICON CARBIDE MOSFET |
240 |
|
![]() Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 15V | 195mOhm @ 3.9A, 15V | 3.6V @ 3.9mA | 28.3 nC @ 15 V | +18V, -8V | 664 pF @ 800 V | - | 115W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
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PJMP099N60EC_T0_00601600V/ 99M / 39A/ EASY TO DRIVER |
2,000 |
|
![]() Техническая документация |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 39A (Tc) | 10V | 99mOhm @ 19.5A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±30V | 2568 pF @ 400 V | - | 308W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB-L |
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IPTG020N13NM6ATMA1TRENCH >=100V |
1,488 |
|
![]() Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SIHP074N65E-GE3E SERIES POWER MOSFET TO-220AB, |
1,000 |
|
![]() Техническая документация |
E | TO-220-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 79mOhm @ 15A, 10V | 5V @ 250µA | 80 nC @ 10 V | ±30V | 2904 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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NVMTS001N06CLTXGT6 60V LL PQFN8*8 EXPANSI |
5,433 |
|
![]() Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | - | - | - | 56.9A (Ta), 398.2A (Tc) | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | Surface Mount | 8-DFNW (8.3x8.4) |
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IPQC60R040S7AXTMA1MOSFET |
730 |
|
![]() Техническая документация |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 790µA | 83 nC @ 12 V | ±20V | - | - | 272W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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IPDQ60R040S7AXTMA1MOSFET |
720 |
|
![]() Техническая документация |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 790µA | 83 nC @ 12 V | ±20V | - | - | 272W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |
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SCT3160KW7HRTL1200V, 17A, 7-PIN SMD, TRENCH-ST |
1,990 |
|
![]() Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42 nC @ 18 V | +22V, -4V | 398 pF @ 800 V | - | - | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7L |
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TK068N65Z5,S1F650V DTMOS6-HSD TO-247 68MOHM |
235 |
|
![]() Техническая документация |
DTMOSVI | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 37A (Ta) | 10V | 68mOhm @ 18.5A, 10V | 4.5V @ 1.69mA | 68 nC @ 10 V | ±30V | 3765 pF @ 300 V | - | 270W (Tc) | 150°C | - | - | Through Hole | TO-247 |
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SIHG47N65E-GE3MOSFET N-CH 650V 47A TO247AC |
486 |
|
![]() Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 72mOhm @ 24A, 10V | 4V @ 250µA | 273 nC @ 10 V | ±30V | 5682 pF @ 100 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SCT3160KWATL1200V, 17A, 7-PIN SMD, TRENCH-ST |
1,000 |
|
![]() Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tj) | 18V | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42 nC @ 18 V | +22V, -4V | 398 pF @ 800 V | - | - | 175°C (TJ) | - | - | Surface Mount | TO-263-7LA |