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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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NTH4L095N065SC1SIC MOS TO247-4L 650V |
420 |
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Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 31A (Tc) | 15V, 18V | 105mOhm @ 12A, 18V | 4.3V @ 4mA | 50 nC @ 10 V | +22V, -8V | 956 pF @ 325 V | - | 129W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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NTH4L070N120M3SSILICON CARBIDE (SIC) MOSFET EL |
175 |
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Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 34A (Tc) | 18V | 87mOhm @ 15A, 18V | 4.4V @ 7mA | 57 nC @ 18 V | +22V, -10V | 1230 pF @ 800 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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IPT017N10NM5LF2ATMA1IPT017N10NM5LF2ATMA1 |
2,000 |
|
Техническая документация |
OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 32A (Ta), 321A (Tc) | 10V, 15V | 1.6mOhm @ 150A, 15V | 3.9V @ 280µA | 206 nC @ 10 V | ±20V | 17000 pF @ 50 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
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NTMFS5C604NLT3GMOSFET N-CH 60V 40A/287A 5DFN |
4,853 |
|
Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Ta), 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 120 nC @ 10 V | ±20V | 8900 pF @ 25 V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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NVMTS1D1N04CTXGT6 40V SL AIZU SINGLE NCH PQFN 8 |
2,909 |
|
Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 48.8A (Ta), 277A (Tc) | 10V | 1.1mOhm @ 50A, 10V | 4V @ 210µA | 86 nC @ 10 V | ±20V | 5410 pF @ 25 V | - | 4.7W (Ta), 153W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFNW (8.3x8.4) |
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IMT65R083M1HXUMA1SILICON CARBIDE MOSFET |
1,726 |
|
Техническая документация |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | - | SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-2 |
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SIHP050N60E-GE3MOSFET N-CH 600V 51A TO220AB |
926 |
|
Техническая документация |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 51A (Tc) | 10V | 50mOhm @ 23A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±30V | 3459 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IPDQ60R037CM8XTMA1IPDQ60R037CM8XTMA1 |
750 |
|
Техническая документация |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 65A (Tj) | 10V | 37mOhm @ 27A, 10V | 4.7V @ 680µA | 79 nC @ 10 V | ±20V | 3459 pF @ 400 V | - | 338W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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IMDQ75R060M1HXUMA1IMDQ75R060M1HXUMA1 |
705 |
|
Техническая документация |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 34A (Tc) | 15V, 20V | 55mOhm @ 11.1A, 20V | 5.6V @ 4mA | 23 nC @ 18 V | +20V, -2V | 779 pF @ 500 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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NTBLS1D5N10MCTXGMOSFET - POWER, SINGLE, N-CHANNE |
1,415 |
|
Техническая документация |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 32A (Ta), 312A (Tc) | 10V | 1.5mOhm @ 80A, 10V | 4V @ 799µA | 131 nC @ 10 V | ±20V | 10100 pF @ 50 V | - | 3.4W (Ta), 322W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-HPSOF |
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IPDQ60T040S7AXTMA1AUTOMOTIVE_COOLMOS |
750 |
|
Техническая документация |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 54A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 780µA | 83 nC @ 12 V | ±20V | 3128 pF @ 300 V | - | 272W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |
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TSM60NE084CIT C0G600V, 21A, SINGLE N-CHANNEL HIGH |
2,000 |
|
Техническая документация |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V, 12V | 82mOhm @ 7A, 12V | 6V @ 2.9mA | 69 nC @ 10 V | ±30V | 2930 pF @ 300 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220TL |
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IMLT65R050M2HXTMA1SILICON CARBIDE MOSFET |
315 |
|
Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPB029N15NM6ATMA1TRENCH >=100V |
1,830 |
|
Техническая документация |
OptiMOS™ 6 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 24A (Ta), 165A (Tc) | 8V, 15V | 2.8mOhm @ 100A, 15V | 4V @ 276µA | 137 nC @ 10 V | ±20V | 9900 pF @ 75 V | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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NTBL060N065SC1M2 650V SIC MOSFET 60MOHM WITH T |
1,998 |
|
Техническая документация |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 46A (Tc) | 15V, 18V | 70mOhm @ 20A, 18V | 4.3V @ 6.5mA | 74 nC @ 18 V | +22V, -8V | 1473 pF @ 325 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-HPSOF |
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PSMN1R8-80SSFJNEXTPOWER 80/100V MOSFETS |
1,771 |
|
Техническая документация |
- | SOT-1235 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 270A (Tc) | 7V, 10V | 1.8mOhm @ 25A, 10V | 4V @ 1mA | 222 nC @ 10 V | ±20V | 15319 pF @ 40 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK88 (SOT1235) |
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PSMN2R0-100SSFJNEXTPOWER 80/100V MOSFETS |
1,754 |
|
Техническая документация |
- | SOT-1235 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 267A (Tc) | 7V, 10V | 2.07mOhm @ 25A, 10V | 4V @ 1mA | 242 nC @ 10 V | ±20V | 16140 pF @ 50 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK88 (SOT1235) |
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SIHH085N60EF-T1GE3EF SERIES POWER MOSFET WITH FAST |
5,665 |
|
Техническая документация |
EF | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 85mOhm @ 17A, 10V | 5V @ 250µA | 63 nC @ 10 V | ±30V | 2733 pF @ 100 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
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SIHK085N60EF-T1GE3EF SERIES POWER MOSFET WITH FAST |
2,000 |
|
Техническая документация |
EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 85mOhm @ 17A, 10V | 5V @ 250µA | 63 nC @ 10 V | ±30V | 2733 pF @ 100 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
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GS-065-014-6-L-MRGS-065-014-6-L-MR |
241 |
|
Техническая документация |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 15.2A (Tc) | 6V | 138mOhm @ 4A, 6V | 2.6V @ 3mA | 2.7 nC @ 6 V | +7V, -10V | 85 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
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