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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STW18NM60NMOSFET N-CH 600V 13A TO247-3 |
534 |
|
Техническая документация |
MDmesh™ II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 285mOhm @ 6.5A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±25V | 1000 pF @ 50 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
GS-065-011-6-LR-MRGS-065-011-6-LR-MR |
235 |
|
Техническая документация |
- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 12.2A (Tc) | 6V | 180mOhm @ 3.2A, 6V | 2.6V @ 2.4mA | 2.2 nC @ 6 V | +7V, -10V | 70 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (8x8) |
|
|
GS-065-011-6-L-MRGS-065-011-6-L-MR |
227 |
|
Техническая документация |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 12.2A (Tc) | 6V | 180mOhm @ 3.2A, 6V | 2.6V @ 2.4mA | 2.2 nC @ 6 V | +7V, -10V | 70 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
|
|
SIJH5100E-T1-GE3N-CHANNEL 100 V (D-S) 175C MOSFE |
1,942 |
|
Техническая документация |
TrenchFET® | PowerPAK® 8 x 8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Ta), 277A (Tc) | 7.5V, 10V | 1.89mOhm @ 20A, 10V | 4V @ 250µA | 128 nC @ 10 V | ±20V | 6900 pF @ 50 V | - | 3.3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
|
IMTA65R060M2HXTMA1SILICON CARBIDE MOSFET |
367 |
|
Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IMT40R036M2HXTMA1SIC-MOS |
2,000 |
|
Техническая документация |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 7.6A (Ta), 50A (Tc) | 15V, 18V | 45.7mOhm @ 11.1A, 18V | 5.6V @ 4mA | 26 nC @ 18 V | +23V, -7V | 1170 pF @ 200 V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
FDH210N08MOSFET N-CH 75V TO247-3 |
560 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 210A (Tc) | 10V | - | - | - | ±20V | - | - | 462W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
AIMBG75R090M1HXTMA1AIMBG75R090M1HXTMA1 |
980 |
|
Техническая документация |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 24A (Tj) | 15V, 20V | 83mOhm @ 7.4A, 20V | 5.6V @ 2.6mA | 15 nC @ 18 V | +23V, -5V | 542 pF @ 500 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7 |
|
NTMTS0D4N04CTXGMOSFET N-CH 40V 79.8A/558A 8DFNW |
2,889 |
|
Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 79.8A (Ta), 558A (Tc) | 10V | 0.45mOhm @ 50A, 10V | 4V @ 250µA | 251 nC @ 10 V | ±20V | 16500 pF @ 20 V | - | 5W (Ta), 244W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-DFNW (8.3x8.4) |
|
|
NTMTSC4D2N10GTXG100V MVSOA IN DFNW8(PQFN8X8) PAC |
2,670 |
|
Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 21A (Ta), 178A (Tc) | 10V | 4.2mOhm @ 88A, 10V | 4V @ 450µA | 159 nC @ 10 V | ±20V | 10450 pF @ 50 V | - | 3.9W (Ta), 267W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount, Wettable Flank | 8-TDFNW (8.3x8.4) |
|
|
R6024ENZ4C13MOSFET N-CH 600V 24A TO247 |
594 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V, 15V | 165mOhm @ 24A, 15V | - | 70 nC @ 15 V | ±20V | - | - | 245W (Tc) | - | - | - | Through Hole | TO-247 |
|
|
SIHH125N60EF-T1GE3MOSFET N-CH 600V 23A PPAK 8 X 8 |
3,000 |
|
Техническая документация |
EF | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 125mOhm @ 12A, 10V | 5V @ 250µA | 47 nC @ 10 V | ±30V | 1533 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
|
AOTL66810DESC: MOSFET N-CH 80V 65A TOLLA |
1,790 |
|
Техническая документация |
AlphaSGT™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 65A (Ta), 420A (Tc) | 8V, 10V | 1.25mOhm @ 20A, 10V | 3.6V @ 250µA | 245 nC @ 10 V | ±20V | 13000 pF @ 40 V | - | 10W (Ta), 425W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLLA |
|
|
RX3L18BBGC16NCH 60V 180A, TO-220AB, POWER MO |
954 |
|
Техническая документация |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 180A (Tc) | 4.5V, 10V | 1.84mOhm @ 90A, 10V | 2.5V @ 1mA | 160 nC @ 10 V | ±20V | 11000 pF @ 30 V | - | 192W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
FCH190N65F-F155MOSFET N-CH 650V 20.6A TO247 |
387 |
|
Техническая документация |
FRFET®, SuperFET® II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.6A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 2mA | 78 nC @ 10 V | ±20V | 3225 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
MSC090SMA070SCT/RMOSFET SIC 700 V 90 MOHM PSMT |
1,300 |
|
Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC090SMA070SDT/RMOSFET SIC 700 V 90 MOHM TO-263- |
800 |
|
Техническая документация |
mSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 34A (Tc) | 18V, 20V | 112mOhm @ 15A, 20V | 5V @ 750µA | 41 nC @ 20 V | +23V, -10V | 806 pF @ 700 V | - | 156W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
TSM60NE084PW C0G600V, 42A, SINGLE N-CHANNEL HIGH |
300 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 42A (Tc) | 10V, 12V | 80mOhm @ 14A, 12V | 6V @ 2.9mA | 68 nC @ 10 V | ±30V | 2939 pF @ 300 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
TP65H100G4LSGB-TRHi Volt FETs |
2,960 |
|
Техническая документация |
SuperGaN® | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 18.9A (Tc) | 10V | 110mOhm @ 12A, 10V | 4.1V @ 1.8mA | 14.4 nC @ 10 V | ±20V | 818 pF @ 400 V | - | 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (8x8) |
|
|
R6027YNZ4C13NCH 600V 27A, TO-247G, POWER MOS |
597 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 27A (Tc) | 10V, 12V | 135mOhm @ 7A, 12V | 6V @ 2mA | 40 nC @ 10 V | ±30V | 1670 pF @ 100 V | - | 245W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
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