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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MCTK075N60FH-TPN-CHANNEL MOSFET,TOLL-8L-KS |
4,000 |
|
Техническая документация |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19.5A (Tc) | 10V | 75mOhm @ 20A, 10V | 5V @ 2.8mA | 81 nC @ 10 V | ±30V | 3202 pF @ 100 V | - | 88W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL-8L-KS |
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IPT65R080CFD7XTMA1HIGH POWER_NEW |
2,000 |
|
Техническая документация |
- | 8-PowerSFN | Tape & Reel (TR) | Active | - | - | 650 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-3 |
|
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MCB220N15Y-TPMOSFET |
7,990 |
|
Техническая документация |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 220A (Tc) | 6V, 10V | 6.5mOhm @ 20A, 10V | 4V @ 250µA | 155 nC @ 10 V | ±20V | 9177 pF @ 75 V | - | 312.5W (Tj) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
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RX3P07CBHC16NCH 100V 70A, TO-220AB, POWER M |
992 |
|
Техническая документация |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 6V, 10V | 5.2mOhm @ 70A, 10V | 4V @ 1mA | 73 nC @ 10 V | ±20V | 4650 pF @ 50 V | - | 135W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IPTC026N12NM6ATMA1TRENCH >=100V |
1,580 |
|
Техническая документация |
OptiMOS™ 6 | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 26A (Ta), 222A (Tc) | 8V, 10V | 2.6mOhm @ 115A, 10V | 3.6V @ 169µA | 88 nC @ 10 V | ±20V | 6500 pF @ 60 V | - | 3.8W (Ta), 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-2 |
|
|
ISC130N20NM6ATMA1MOSFET |
4,434 |
|
Техническая документация |
OptiMOS™ 6 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.8A (Ta), 88A (Tc) | 10V, 15V | 11.7mOhm @ 50A, 15V | 4.5V @ 135µA | 58 nC @ 10 V | ±20V | 3900 pF @ 100 V | - | 3W (Ta), 242W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-8-3 |
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G2R1000MT17J-TR1700V 1000M TO-263-7 G2R SIC MOS |
606 |
|
Техническая документация |
G2R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 4V @ 2mA | 11 nC @ 20 V | +20V, -5V | 139 pF @ 1000 V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
IXTP300N04T2MOSFET N-CH 40V 300A TO220AB |
463 |
|
Техническая документация |
TrenchT2™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 300A (Tc) | 10V | 2.5mOhm @ 500mA, 10V | 4V @ 250µA | 145 nC @ 10 V | ±20V | 10700 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
IPT023N10NM5LF2ATMA1IPT023N10NM5LF2ATMA1 |
1,980 |
|
Техническая документация |
OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 27A (Ta), 243A (Tc) | 10V, 15V | 2.1mOhm @ 100A, 15V | 3.9V @ 193µA | 144 nC @ 10 V | ±20V | 12000 pF @ 50 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
|
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IPP65R110CFDXKSA2MOSFET N-CH 650V 31.2A TO220-3 |
436 |
|
Техническая документация |
CoolMOS™ CFD2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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CDF56G6517N TR13 PBFREE650V, 17A, N-CHANNEL GAN FET IN |
2,498 |
|
Техническая документация |
* | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | - | 650 V | 17A (Tc) | - | - | - | - | - | - | - | 1.1W (Ta) | - | - | - | Surface Mount, Wettable Flank | 8-DFN (5x6) |
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S2M0120120KMOSFET SILICON CARBIDE SIC 1200V |
295 |
|
Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 20V | 150mOhm @ 13.3A, 20V | 4V @ 3.3mA | 29.6 nC @ 20 V | +20V, -5V | 652 pF @ 1000 V | - | 156W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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PJMF105N60FRC_T0_00601600V/ 105M / 35A/ SJ MOSFET WITH |
2,000 |
|
Техническая документация |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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PJMP105N60FRC_T0_00601600V/ 105M / 35A/ SJ MOSFET WITH |
2,000 |
|
Техническая документация |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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R6027YNXC7GNCH 600V 14A, TO-220FM, POWER MO |
1,000 |
|
Техническая документация |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 10V, 12V | 135mOhm @ 7A, 12V | 6V @ 2mA | 40 nC @ 10 V | ±30V | 1670 pF @ 100 V | - | 70W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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IPB90R340C3ATMA2MOSFET N-CH 900V 15A TO263-3 |
1,783 |
|
Техническая документация |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94 nC @ 10 V | ±20V | 2400 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPDQ65R080CFD7XTMA1HIGH POWER_NEW |
750 |
|
Техническая документация |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 36A (Tc) | 10V | 80mOhm @ 12.5A, 10V | 4.5V @ 630µA | 50 nC @ 10 V | ±20V | 2513 pF @ 400 V | - | 223W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
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S2M0160120JMOSFET SILICON CARBIDE SIC 1200V |
300 |
|
Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 16A (Tc) | 20V | 196mOhm @ 10A, 20V | 4V @ 2.5mA | 26.5 nC @ 20 V | +20V, -5V | 513 pF @ 1000 V | - | 122W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
IAUTN06S5N008GATMA1MOSFET_)40V 60V) |
1,690 |
|
Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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SUM70042M-GE3N-CHANNEL 100 V (D-S) MOSFET D2P |
780 |
|
Техническая документация |
TrenchFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 150A (Tc) | 7.5V, 10V | 3.83mOhm @ 20A, 10V | 3.8V @ 250µA | 126 nC @ 10 V | ±20V | 6750 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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