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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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IQD063N15NM5ATMA1TRENCH >=100V |
4,872 |
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Техническая документация |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 14.1A (Ta), 148A (Tc) | 8V, 10V | 6.32mOhm @ 50A, 10V | 4.6V @ 159µA | 60 nC @ 10 V | ±20V | 4700 pF @ 75 V | - | 2.5W (Ta), 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-9 |
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G3R350MT12J-TR1200V 350M TO-263-7 G3R SIC MOSF |
623 |
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Техническая документация |
G3R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 15V, 18V | 395mOhm @ 4A, 18V | 2.7V @ 2mA | 10 nC @ 15 V | +22V, -10V | 331 pF @ 800 V | - | 64W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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RBA300N10EANS-3UA02#GB0100V-300A-N-CHANNEL MOSFET FOR H |
1,955 |
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Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RJ1P07CBHTL1NCH 100V 70A, TO-263AB, POWER M |
800 |
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Техническая документация |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 6V, 10V | 5.1mOhm @ 70A, 10V | 4V @ 1mA | 73 nC @ 10 V | ±20V | 4650 pF @ 50 V | - | 135W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263AB |
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NVMFS6H800NLWFT1GMOSFET N-CH 80V 30A/224A 5DFN |
1,495 |
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Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 30A (Ta), 224A (Tc) | 4.5V, 10V | 1.9mOhm @ 50A, 10V | 2V @ 330µA | 112 nC @ 10 V | ±20V | 6900 pF @ 40 V | - | 3.9W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
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NVMFS5C410NWFAFT1GMOSFET N-CH 40V 46A/300A 5DFN |
1,355 |
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Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 46A (Ta), 300A (Tc) | 10V | 0.92mOhm @ 50A, 10V | 3.5V @ 250µA | 86 nC @ 10 V | ±20V | 6100 pF @ 25 V | - | 3.9W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 5-DFN (5x6) (8-SOFL) |
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IPZ60R099C7XKSA1MOSFET N-CH 600V 22A TO247-4 |
8,125 |
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Техническая документация |
CoolMOS™ C7 | TO-247-4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42 nC @ 10 V | ±20V | 1819 pF @ 400 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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NVB099N65S3SF3 650V EASY 99MOHM D2PAK AUTO |
3,141 |
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Техническая документация |
SuperFET® III | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.5V @ 740µA | 61 nC @ 10 V | ±30V | 2480 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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PJMP125N60FRC_T0_00601600V/ 125M / 30A/ SJ MOSFET WITH |
2,000 |
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Техническая документация |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPW65R150CFDAFKSA1MOSFET N-CH 650V 22.4A TO247-3 |
426 |
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Техническая документация |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3 |
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SIHA25N60EFL-GE3N-CHANNEL 600V |
987 |
|
Техническая документация |
E | TO-220-3 Full Pack | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 146mOhm @ 12.5A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±30V | 2274 pF @ 100 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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SIHP25N60EFL-BE3N-CHANNEL 600V |
897 |
|
Техническая документация |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 146mOhm @ 12.5A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±30V | 2274 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHP125N60EF-GE3MOSFET N-CH 600V 25A TO220AB |
976 |
|
Техническая документация |
EF | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 125mOhm @ 12A, 10V | 5V @ 250µA | 47 nC @ 10 V | ±30V | 1533 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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AUIRF2804STRL7PMOSFET N-CH 40V 240A D2PAK |
3,076 |
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Техническая документация |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 6930 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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PJMF125N60FRC_T0_00601600V/ 125M / 30A/ SJ MOSFET WITH |
2,000 |
|
Техническая документация |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXFA36N30P3MOSFET N-CH 300V 36A TO263AA |
164 |
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Техническая документация |
HiPerFET™, Polar3™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 36A (Tc) | 10V | 110mOhm @ 18A, 10V | 4.5V @ 250µA | 30 nC @ 10 V | ±20V | 2040 pF @ 25 V | - | 347W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA (IXFA) |
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IPBE65R115CFD7AATMA1AUTOMOTIVE_COOLMOS PG-TO263-7 |
976 |
|
Техническая документация |
CoolMOS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 115mOhm @ 9.7A, 10V | 4.5V @ 490µA | 41 nC @ 10 V | ±20V | 1950 pF @ 400 V | - | 114W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-7-11 |
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IPI041N12N3GAKSA1MOSFET N-CH 120V 120A TO262-3 |
464 |
|
Техническая документация |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 120A (Tc) | 10V | 4.1mOhm @ 100A, 10V | 4V @ 270µA | 211 nC @ 10 V | ±20V | 13800 pF @ 60 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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TK25V60X5,LQPB-F POWER MOSFET TRANSISTOR DTM |
2,488 |
|
Техническая документация |
DTMOSIV | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 150mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C | - | - | Surface Mount | 4-DFN-EP (8x8) |
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ISC037N13NM6ATMA1TRENCH >=100V |
4,654 |
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Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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