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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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TSM60NE110CIT C0G600V, 17A, SINGLE N-CHANNEL HIGH |
2,000 |
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Техническая документация |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V, 12V | 100mOhm @ 5.6A, 12V | 6V @ 2.5mA | 55 nC @ 10 V | ±30V | 2330 pF @ 300 V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220TL |
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S2M0160120DMOSFET SILICON CARBIDE SIC 1200V |
285 |
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Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 20V | 196mOhm @ 10A, 20V | 4V @ 2.5mA | 26.5 nC @ 20 V | +20V, -5V | 513 pF @ 1000 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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IQD020N10NM5ATMA1TRENCH >=100V |
4,985 |
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Техническая документация |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 26A (Ta), 276A (Tc) | 6V, 10V | 2.05mOhm @ 50A, 10V | 3.8V @ 159µA | 134 nC @ 10 V | ±20V | 9500 pF @ 50 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-8-9 |
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IQD016N08NM5ATMA1TRENCH 40<-<100V |
4,978 |
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Техническая документация |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 31A (Ta), 323A (Tc) | 6V, 10V | 1.57mOhm @ 50A, 10V | 3.8V @ 159µA | 133 nC @ 10 V | ±20V | 9200 pF @ 40 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-8-9 |
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SIHB085N60EF-GE3E SERIES POWER MOSFET WITH FAST |
2,000 |
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Техническая документация |
EF | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 84mOhm @ 17A, 10V | 5V @ 250µA | 63 nC @ 10 V | ±30V | 2733 pF @ 100 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IPB65R150CFDAATMA1MOSFET N-CH 650V 22.4A D2PAK |
1,192 |
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Техническая документация |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
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IPW60R120C7XKSA1MOSFET N-CH 600V 19A TO247-3 |
210 |
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Техническая документация |
CoolMOS™ C7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 120mOhm @ 7.8A, 10V | 4V @ 390µA | 34 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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FCPF190N65FL1-F154MOSFET N-CH 650V 20.6A TO220F-3 |
845 |
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Техническая документация |
FRFET®, SuperFET® II | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.6A (Tc) | - | 190mOhm @ 10A, 10V | 5V @ 2mA | 78 nC @ 10 V | ±20V | 3055 pF @ 100 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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IPDQ60R075CFD7XTMA1HIGH POWER_NEW PG-HDSOP-22 |
750 |
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Техническая документация |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HDSOP-22-1 |
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MCACLS330N04YAHE3-TPMOSFET N-CH 40 330A DFN5060-DSC |
10,000 |
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Техническая документация |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 330A (Tc) | 6V, 10V | 1.1mOhm @ 75A, 10V | 4V @ 250µA | 115.9 nC @ 10 V | ±20V | 7349 pF @ 25 V | - | 263W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DFN5060-DSC |
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IGLR60R340D1XUMA1GAN HV |
4,842 |
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Техническая документация |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | GaNFET (Gallium Nitride) | 600 V | 8.2A (Tc) | - | - | 1.6V @ 530µA | - | -10V | 87.7 pF @ 400 V | - | 41.6W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-7 |
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NTMFS7D5N15MCPTNG 150V 7.4MOHM, POWERCLIP56 |
2,855 |
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Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 13.5A (Ta) | 8V, 10V | 7.9mOhm @ 54A, 10V | 4.5V @ 295µA | 46 nC @ 10 V | ±20V | 3835 pF @ 75 V | - | 3.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IPB0401NM5SATMA1TRENCH >=100V |
990 |
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Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SIHG155N60EF-GE3EF SERIES POWER MOSFET WITH FAST |
925 |
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Техническая документация |
EF | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 149mOhm @ 2A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±20V | 1465 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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WI61195TRPOWER GAN IC 8X8 PDFN |
2,495 |
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Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IQD009N06NM5SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 |
5,000 |
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Техническая документация |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 42A (Ta), 445A (Tc) | 6V, 10V | 0.9mOhm @ 50A, 10V | 3.3V @ 163µA | 150 nC @ 10 V | ±20V | 12000 pF @ 30 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHSON-8-U02 |
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PSMN028N10NS2_R2_00201100V/ 2.8M / TOLL FOR INDUSTRAIL |
1,980 |
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Техническая документация |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 240A | 4.5V, 10V | - | - | 65 nC @ 10 V | ±20V | - | - | - | - | - | - | Surface Mount | TOLL |
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NVMFS5C406NT1GMOSFET N-CH 40V 52A/353A 5DFN |
1,560 |
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Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 52A (Ta), 353A (Tc) | 10V | 0.8mOhm @ 50A, 10V | 4V @ 280µA | 110 nC @ 10 V | ±20V | 7288 pF @ 20 V | - | 3.9W (Ta), 179W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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CCSPG1060N TR PBFREE100V, 60A, N-CHANNEL CHIP SCALE |
1,442 |
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Техническая документация |
* | 8-XFLGA, CSP | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 60A (Tc) | 5V | 5.5mOhm @ 25A, 5V | 2.5V @ 9mA | 9.2 nC @ 5 V | +6V, -4V | 1000 pF @ 50 V | - | 300W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-CSP (3.5x2.13) |
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RBA300N10EHPF-5UA02#GB0100V-300A-N-CHANNEL MOSFET FOR H |
1,500 |
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Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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