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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AIMBG75R060M1HXTMA1AIMBG75R060M1HXTMA1 |
2,497 |
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Техническая документация |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 34A (Tj) | 15V, 20V | 55mOhm @ 11.1A, 20V | 5.6V @ 4mA | 23 nC @ 18 V | +23V, -5V | 779 pF @ 500 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7 |
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AOT66518LMOSFET N-CH 150V 30A/120A TO220 |
831 |
|
Техническая документация |
AlphaSGT™ | TO-220-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 30A (Ta), 120A (Tc) | 8V, 10V | 5mOhm @ 20A, 10V | 3.7V @ 250µA | 115 nC @ 10 V | ±20V | 6460 pF @ 75 V | - | 10W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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AOB66914LN |
800 |
|
Техническая документация |
AlphaSGT™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 45A (Ta), 120A (Tc) | 6V, 10V | 3.5mOhm @ 20A, 6V | 3.5V @ 250µA | 220 nC @ 10 V | ±20V | 12500 pF @ 50 V | - | 10W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IPZ60R060C7XKSA1MOSFET N-CH 600V 35A TO247-4 |
229 |
|
Техническая документация |
CoolMOS™ C7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68 nC @ 10 V | ±20V | 2850 pF @ 400 V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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IMW65R050M2HXKSA1SILICON CARBIDE MOSFET |
207 |
|
Техническая документация |
CoolSiC™ Gen 2 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A (Tc) | 15V, 20V | 46mOhm @ 18.2A, 20V | 5.6V @ 3.7mA | 22 nC @ 18 V | +23V, -7V | 790 pF @ 400 V | - | 153W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
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NVMTS001N06CTXGMOSFET N-CH 60V 53.7A/376A 8DFNW |
6,000 |
|
Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 53.7A (Ta), 376A (Tc) | 10V | 0.91mOhm @ 50A, 10V | 4V @ 250µA | 113 nC @ 10 V | ±20V | 8705 pF @ 30 V | - | 5W (Ta), 244W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFNW (8.3x8.4) |
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IPDQ65R040CFD7XTMA1HIGH POWER_NEW |
744 |
|
Техническая документация |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 40mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 97 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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IPT020N13NM6ATMA1TRENCH >=100V |
1,416 |
|
Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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GS-065-014-6-LR-MRGS-065-014-6-LR-MR |
227 |
|
Техническая документация |
- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 15.2A (Tc) | 6V | 138mOhm @ 4A, 6V | 2.6V @ 3mA | 2.7 nC @ 6 V | +7V, -10V | 85 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (8x8) |
|
|
AOTL66912QLINEAR IC |
1,898 |
|
Техническая документация |
AlphaSGT™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 53A (Ta), 370A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.5V @ 250µA | 220 nC @ 10 V | ±20V | 12500 pF @ 50 V | - | 10W (Ta), 500W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLLA |
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IMT65R072M1HXUMA1SILICON CARBIDE MOSFET |
1,919 |
|
Техническая документация |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | - | SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-2 |
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RX3G18BBGC16NCH 40V 180A, TO-220AB, POWER MO |
937 |
|
Техническая документация |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 4.5V, 10V | 1.47mOhm @ 90A, 10V | 2.5V @ 1mA | 210 nC @ 10 V | ±20V | 13200 pF @ 20 V | - | 192W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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NTHL075N065SC1SILICON CARBIDE (SIC) MOSFET - E |
730 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A (Tc) | 15V, 18V | 85mOhm @ 15A, 18V | 4.3V @ 5mA | 61 nC @ 18 V | +22V, -8V | 1196 pF @ 325 V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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SIHK075N60EF-T1GE3E SERIES POWER MOSFET WITH FAST |
1,926 |
|
Техническая документация |
EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 71mOhm @ 15A, 10V | 5V @ 250µA | 72 nC @ 10 V | ±30V | 2954 pF @ 100 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
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C3M0350120J-TRSIC, MOSFET, 350M,1200V, TO-263- |
777 |
|
Техническая документация |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 7.2A (Tc) | 15V | 455mOhm @ 3.6A, 15V | 3.6V @ 1mA | 13 nC @ 15 V | +15V, -4V | 345 pF @ 1000 V | - | 40.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7 |
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MSC060SMA070SCT/RMOSFET SIC 700 V 60 MOHM PSMT |
1,300 |
|
Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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MSC060SMA070SDT/RMOSFET SIC 700 V 60 MOHM TO-263- |
790 |
|
Техническая документация |
mSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 51A (Tc) | 18V, 20V | 75mOhm @ 20A, 20V | 5V @ 1mA | 56 nC @ 20 V | +23V, -10V | 1160 pF @ 700 V | - | 240W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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IMZA65R050M2HXKSA1SILICON CARBIDE MOSFET |
205 |
|
Техническая документация |
CoolSiC™ Gen 2 | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A (Tc) | 15V, 20V | 46mOhm @ 18.2A, 20V | 5.6V @ 3.7mA | 22 nC @ 18 V | +23V, -7V | 790 pF @ 400 V | - | 153W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-8 |
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SICW1000N170A-BPN-CHANNEL MOSFET,TO-247AB |
300 |
|
Техническая документация |
- | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 3A | 15V, 20V | 1.32Ohm @ 1.5A, 20V | 4.5V @ 1mA | 15.5 nC @ 20 V | +25V, -5V | 124 pF @ 1000 V | - | 69W | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AB |
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MSJB11N80A-TPN-CHANNEL MOSFET, D2-PAK |
1,600 |
|
Техническая документация |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 470mOhm @ 7.1A, 10V | 4.5V @ 250µA | 24 nC @ 10 V | ±20V | 958 pF @ 400 V | - | 156W (Tj) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
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