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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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IMLT65R040M2HXTMA1SILICON CARBIDE MOSFET |
327 |
|
Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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S2M0080120JMOSFET SILICON CARBIDE SIC 1200V |
230 |
|
Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 37A (Tj) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 54 nC @ 20 V | +20V, -5V | 1324 pF @ 1000 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
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NTHL032N065M3SSIC MOS TO247-3L 32MOHM 650V M3S |
815 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 51A (Tc) | 15V, 18V | 44mOhm @ 15A, 18V | 4V @ 7.5mA | 55 nC @ 18 V | +22V, -8V | 1410 pF @ 400 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
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IPDQ65R040CFD7AXTMA1AUTOMOTIVE_COOLMOS |
392 |
|
Техническая документация |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 40mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 97 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 357W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |
|
|
IPQC65R040CFD7AXTMA1AUTOMOTIVE_COOLMOS |
200 |
|
Техническая документация |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 40mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 97 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 357W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |
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|
IPZA60R037CM8XKSA1IPZA60R037CM8XKSA1 |
195 |
|
Техническая документация |
CoolMOS™ | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 64A (Tj) | 10V | 37mOhm @ 27A, 10V | 4.7V @ 680µA | 79 nC @ 10 V | ±20V | 3458 pF @ 400 V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4-U02 |
|
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IPT65R040CFD7XTMA1MOSFET N-CH 650V 8HSOF |
2,000 |
|
Техническая документация |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-2 |
|
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SCT3105KRHRC151200V, 24A, 4-PIN THD, TRENCH-ST |
440 |
|
Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 24A (Tc) | 18V | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | +22V, -4V | 574 pF @ 800 V | - | 134W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
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IMTA65R040M2HXTMA1SILICON CARBIDE MOSFET |
150 |
|
Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
NVMFS5C604NWFT1GNFET SO8FL 60V 287A 1.2MO |
1,500 |
|
Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 10 V | 40A (Ta), 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 6400 pF @ 25 V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
|
TK31V60W,LVQMOSFET N-CH 600V 30.8A 4DFN |
2,455 |
|
Техническая документация |
DTMOSIV | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 98mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 240W (Tc) | 150°C (TJ) | - | - | Surface Mount | 4-DFN-EP (8x8) |
|
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IMT65R057M1HXUMA1SILICON CARBIDE MOSFET |
1,983 |
|
Техническая документация |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | - | SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-2 |
|
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PSMNR90-80CSFJPSMNR90-80CSF/SOT8005A/CCPAK12 |
250 |
|
Техническая документация |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 505A (Tc) | 10V | 0.9mOhm @ 25A, 10V | 4V @ 1mA | 463 nC @ 10 V | ±20V | 32115 pF @ 40 V | - | 1.55kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212i |
|
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PSMNR90-80ASFJPSMNR90-80ASF/SOT8000A/CCPAK12 |
250 |
|
Техническая документация |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 505A (Tc) | 10V | 0.85mOhm @ 25A, 10V | 4V @ 1mA | 463 nC @ 10 V | ±20V | 32115 pF @ 40 V | - | 1.55kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212 |
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SIHK055N60EF-T1GE3E SERIES POWER MOSFET WITH FAST |
2,040 |
|
Техническая документация |
EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 58mOhm @ 16A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±30V | 3667 pF @ 100 V | - | 236W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
|
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PSMN1R0-100CSFJPSMN1R0-100CSF/SOT8005A/CCPAK1 |
250 |
|
Техническая документация |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 460A (Tc) | 10V | 1.04mOhm @ 25A, 10V | 4V @ 1mA | 539 nC @ 10 V | ±20V | 33624 pF @ 50 V | - | 1.55kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212i |
|
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E4M0060075K1MOSFETS AUTOMOTIVE 126W 3.8V NC |
440 |
|
Техническая документация |
E | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 35A (Tc) | 15V | 78mOhm @ 13.4A, 15V | 3.8V @ 3.67mA | 52 nC @ 15 V | +19V, -8V | 1203 pF @ 500 V | - | 126W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
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NTH4L032N065M3SSIC MOS TO247-4L 32MOHM 650V M3S |
618 |
|
Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 50A (Tc) | 15V, 18V | 44mOhm @ 15A, 18V | 4V @ 7.5mA | 55 nC @ 18 V | +22V, -8V | 1410 pF @ 400 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
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PJMK074N60FRCH_T0_00201600V/ 74M / 53A/ FAST RECOVERY Q |
1,500 |
|
Техническая документация |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
STWA67N60M6MOSFET N-CH 600V 52A TO247 |
555 |
|
Техническая документация |
MDmesh™ M6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Tc) | 10V | 49mOhm @ 26A, 10V | 4.75V @ 250µA | 72.5 nC @ 10 V | ±25V | 3400 pF @ 100 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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