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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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NTH4L030N120M3SSILICON CARBIDE (SIC) MOSFET EL |
422 |
|
Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 73A (Tc) | 18V | 39mOhm @ 30A, 18V | 4.4V @ 15mA | 107 nC @ 18 V | +22V, -10V | 2430 pF @ 800 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NVH040N65S3FSF3 FRFET AUTO 40MOHM TO-247 |
412 |
|
Техническая документация |
SuperFET® III | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 153 nC @ 10 V | ±30V | 5875 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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SICW025N065H-BPSIC MOSFET,TO-247AB |
360 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 107A (Tc) | 18V | 30mOhm @ 50A, 18V | 4.5V @ 50mA | 275 nC @ 18 V | +22V, -10V | 5740 pF @ 400 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
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STH12N120K5-2AGAUTOMOTIVE-GRADE N-CHANNEL 1200 |
998 |
|
Техническая документация |
MDmesh™ K5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | H2PAK-2 |
|
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S2M0040120D-1MOSFET SILICON CARBIDE SIC 1200V |
299 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tj) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 92.1 nC @ 20 V | +20V, -5V | 1904 pF @ 1000 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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NSF080120L3A0QSIC MOSFET / 80MOHM / 1200V / TO |
420 |
|
Техническая документация |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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G3F45MT06D650V 40M TO-247-3 G3F SIC MOSFET |
600 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 |
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GS-065-030-6-LL-MRGAN POWER TRANSISTOR |
195 |
|
Техническая документация |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 40A (Tc) | 6V | 58mOhm @ 5.5A, 6V | 2.6V @ 7.5mA | 6.7 nC @ 6 V | +7V, -10V | 235 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL |
|
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C3M0045075K1SICFET N-CH 750V 42A TO247 |
167 |
|
Техническая документация |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 42A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.8V @ 4.84mA | 65 nC @ 15 V | -8V, +19V | 1606 pF @ 500 V | - | 139W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
IPWS65R022CFD7AXKSA1AUTOMOTIVE_COOLMOS PG-TO247-3 |
238 |
|
Техническая документация |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 96A (Tc) | 10V | 22mOhm @ 58.2A, 10V | 4.5V @ 2.91mA | 234 nC @ 10 V | ±30V | 11659 pF @ 400 V | - | 446W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-31 |
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S3M0040120DMOSFET SILICON CARBIDE SIC 1200V |
300 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 65A (Tc) | 18V | 52mOhm @ 40A, 18V | 4V @ 16mA | 143 nC @ 18 V | +20V, -8V | 2844 pF @ 1000 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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S2M0040120K-1MOSFET SILICON CARBIDE SIC 1200V |
300 |
|
Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tj) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 92.1 nC @ 20 V | +20V, -5V | 1904 pF @ 1000 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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IPDQ60R025CFD7XTMA1HIGH POWER_NEW |
725 |
|
Техническая документация |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 90A (Tc) | 10V | 25mOhm @ 32.6A, 10V | 4.5V @ 1.63mA | 141 nC @ 10 V | ±20V | 5626 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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G3F33MT06J-TR650V 27M TO-263-7 G3F SIC MOSFET |
800 |
|
Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 80A (Tc) | 15V, 18V | 38mOhm @ 26A, 18V | 4.3V @ 12mA | 81 nC @ 18 V | +22V, -10V | 2394 pF @ 400 V | - | 261W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F45MT06K650V 40M TO-247-4 G3F SIC MOSFET |
600 |
|
Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 52A (Tc) | 15V, 18V | 54mOhm @ 20A, 18V | 4.3V @ 8mA | 55 nC @ 18 V | +22V, -10V | 1640 pF @ 400 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
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AIMZHN120R080M1TXKSA1SIC_DISCRETE |
233 |
|
Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V, 20V | 100mOhm @ 10A, 20V | 5.1V @ 3.3mA | 24 nC @ 20 V | +23V, -5V | 671 pF @ 800 V | - | 169W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
|
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SCT055HU65G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
523 |
|
Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 15V, 18V | 72mOhm @ 15A, 18V | 4.2V @ 1mA | 29 nC @ 18 V | +22V, -10V | 721 pF @ 400 V | - | 185W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | HU3PAK |
|
STY60NK30ZMOSFET N-CH 300V 60A MAX247 |
490 |
|
Техническая документация |
SuperMESH™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 100µA | 220 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | MAX247™ |
|
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NSF060120D7A0JNSF060120D7A0/SOT8070/TO263-7L |
800 |
|
Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
NSF060120L3A0QNSF060120L3A0/SOT429-2/TO247-3 |
450 |
|
Техническая документация |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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