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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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S3M0040120JMOSFET SILICON CARBIDE SIC 1200V |
300 |
|
Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 76A (Tc) | 18V | 52mOhm @ 40A, 18V | 4V @ 16mA | 143 nC @ 18 V | +20V, -8V | 2844 pF @ 1000 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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TSG65N110CE RVG650V, 18A, PDFN88, E-MODE GAN TR |
3,000 |
|
Техническая документация |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
AIMDQ75R027M1HXUMA1AIMDQ75R027M1HXUMA1 |
671 |
|
Техническая документация |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 64A (Tj) | 15V, 20V | 25mOhm @ 24.5A, 20V | 5.6V @ 8.8mA | 49 nC @ 18 V | +23V, -5V | 1668 pF @ 500 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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G3F40MT12K1200V 40M TO-247-4 G3F SIC MOSFE |
552 |
|
Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 55A (Tc) | 18V | 53mOhm @ 20A, 18V | 4.3V @ 16mA | 86 nC @ 18 V | +22V, -10V | 2023 pF @ 800 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
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AOK033V120X21200V SILICON CARBIDE MOSFET |
208 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 15V | 43mOhm @ 20A, 15V | 2.8V @ 17.5mA | 104 nC @ 15 V | +15V, -5V | 2908 pF @ 800 V | - | 300W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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NSF060120L4A0QNSF060120L4A0/SOT8071/TO247-4L |
450 |
|
Техническая документация |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
IPDQ60R017S7AXTMA1MOSFET |
750 |
|
Техническая документация |
CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.89mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
|
IMZC120R026M2HXKSA1IMZC120R026M2HXKSA1 |
215 |
|
Техническая документация |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 69A (Tc) | 15V, 18V | 25mOhm @ 27A, 18V | 5.1V @ 8.6mA | 60 nC @ 18 V | +23V, -7V | 1990 pF @ 800 V | - | 289W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
|
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IMZA75R027M1HXKSA1SILICON CARBIDE MOSFET |
239 |
|
Техническая документация |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 60A (Tj) | 15V, 20V | 25mOhm @ 24.5A, 20V | 5.6V @ 8.8mA | 49 nC @ 18 V | +23V, -5V | 1668 pF @ 500 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
|
AOK065V120X2SILICON CARBIDE MOSFET, ENHANCEM |
118 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40.3A (Tc) | 15V | 85mOhm @ 20A, 15V | 3.5V @ 250µA | 62.3 nC @ 15 V | +18V, -8V | 1716 pF @ 800 V | - | 187.5W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
SCT060HU75G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
582 |
|
Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 30A (Tc) | 15V, 18V | 78mOhm @ 15A, 18V | 4.2V @ 1mA | 29 nC @ 18 V | 4.2V @ 1mA | 680 pF @ 400 V | - | 185W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | HU3PAK |
|
|
IPZA60R016CM8XKSA1IPZA60R016CM8XKSA1 |
391 |
|
Техническая документация |
CoolMOS™ | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 123A (Tc) | 10V | 16mOhm @ 62.5A, 10V | 4.7V @ 1.48mA | 171 nC @ 10 V | ±20V | 7545 pF @ 400 V | - | 521W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4-U02 |
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NVBG023N065M3SSIC MOS D2PAK-7L 23MOHM 650V M3S |
1,600 |
|
Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 70A (Tc) | 15V, 18V | 33mOhm @ 20A, 18V | 4V @ 10mA | 69 nC @ 18 V | +22V, -8V | 1951 pF @ 400 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
|
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G3F33MT06K650V 27M TO-247-4 G3F SIC MOSFET |
600 |
|
Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 74A (Tc) | 15V, 18V | 38mOhm @ 26A, 18V | 4.3V @ 12mA | 81 nC @ 18 V | +22V, -10V | 2394 pF @ 400 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
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NVHL060N065SC1SIC MOS TO247-3L 650V |
450 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 47A (Tc) | 15V, 18V | 70mOhm @ 20A, 18V | 4.3V @ 6.5mA | 74 nC @ 18 V | +22V, -8V | 1473 pF @ 325 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
|
|
GS66502B-MRGS66502B-MR |
208 |
|
Техническая документация |
- | 3-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.5A (Tc) | 6V | 260mOhm @ 2.25A, 6V | 2.6V @ 1.75mA | 1.6 nC @ 6 V | +7V, -10V | 60 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
|
|
TW048Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 48 |
243 |
|
Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | 18V | 69mOhm @ 20A, 18V | 5V @ 1.6mA | 41 nC @ 18 V | +25V, -10V | 1362 pF @ 400 V | - | 132W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
|
|
AIMBG120R060M1XTMA1SIC_DISCRETE |
959 |
|
Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 38A (Tc) | 18V, 20V | 75mOhm @ 13A, 20V | 5.1V @ 4.3mA | 32 nC @ 20 V | +23V, -5V | 880 pF @ 800 V | - | 202W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-12 |
|
|
NVHL023N065M3SSIC MOS TO247-3L 23MOHM 650V M3S |
440 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 70A (Tc) | 15V, 18V | 33mOhm @ 20A, 18V | 4V @ 10mA | 69 nC @ 18 V | +22V, -8V | 1952 pF @ 400 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
|
SCTH35N65G2V-7AGSICFET N-CH 650V 45A H2PAK-7 |
1,000 |
|
Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
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