| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
                 
                   
                
                 | 
				
                    SI7421DN-T1-E3MOSFET P-CH 30V 6.4A PPAK1212-8  |  
                3,568 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 30 V | 6.4A (Ta) | 4.5V, 10V | 25mOhm @ 9.8A, 10V | 3V @ 250µA | 40 nC @ 10 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 | 
                 
                   
                
                 | 
				
                    IRFR420APBFMOSFET N-CH 500V 3.3A DPAK  |  
                1,695 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.3A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17 nC @ 10 V | ±30V | 340 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK | 
                 
                   
                
                 | 
				
                    NVTFS6H850NLTAGMOSFET N-CH 80V 14.8A/64A 8WDFN  |  
                878 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                - | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 14.8A (Ta), 64A (Tc) | 4.5V, 10V | 8.6mOhm @ 10A, 10V | 2V @ 70µA | 26 nC @ 10 V | ±20V | 1450 pF @ 40 V | - | 3.9W (Ta), 73W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-WDFN (3.3x3.3) | 
                 
                   
                
                 | 
				
                    VN4012L-GMOSFET N-CH 400V 160MA TO92-3  |  
                457 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                - | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 160mA (Tj) | 4.5V | 12Ohm @ 100mA, 4.5V | 1.8V @ 1mA | - | ±20V | 110 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 | 
                 
                   
                
                 | 
				
                    TP2635N3-GMOSFET P-CH 350V 180MA TO92-3  |  
                344 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                - | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | P-Channel | MOSFET (Metal Oxide) | 350 V | 180mA (Tj) | 2.5V, 10V | 15Ohm @ 300mA, 10V | 2V @ 1mA | - | ±20V | 300 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 | 
                 
                   
                
                 | 
				
                    SQJ850EP-T2_GE3N-CHANNEL 60-V (D-S) 175C MOSFET  |  
                8,710 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                - | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Tc) | 4.5V, 10V | 23mOhm @ 10.3A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 1225 pF @ 30 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 | 
                 
                   
                
                 | 
				
                    IPD30N06S215ATMA2MOSFET N-CH 55V 30A TO252-31  |  
                6,559 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 10V | 14.7mOhm @ 30A, 10V | 4V @ 80µA | 110 nC @ 10 V | ±20V | 1485 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 | 
                 
                   
                
                 | 
				
                    IRFR014PBFMOSFET N-CH 60V 7.7A DPAK  |  
                1,978 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.7A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK | 
                 
                   
                
                 | 
				
                    STF2N80K5MOSFET N-CH 800V 2A TO220FP  |  
                846 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                SuperMESH5™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 4.5Ohm @ 1A, 10V | 5V @ 100µA | 3 nC @ 10 V | 30V | 95 pF @ 100 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP | 
                 
                   
                
                 | 
				
                    BSZ084N08NS5ATMA1MOSFET N-CH 80V 40A TSDSON  |  
                34,017 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 40A (Tc) | 6V, 10V | 8.4mOhm @ 20A, 10V | 3.8V @ 31µA | 25 nC @ 10 V | ±20V | 1820 pF @ 40 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL | 
                 
                   
                
                 | 
				
                    RQ3L090GNTBMOSFET N-CH 60V 9A/30A 8HSMT  |  
                17,625 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                - | 8-PowerVDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 9A (Ta), 30A (Tc) | 4.5V, 10V | 13.9mOhm @ 9A, 10V | 2.7V @ 300µA | 24.5 nC @ 10 V | ±20V | 1260 pF @ 30 V | - | 2W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-HSMT (3.2x3) | 
                 
                   
                
                 | 
				
                    SIS184DN-T1-GE3MOSFET N-CH 60V 17.4A/65.3A PPAK  |  
                10,364 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                TrenchFET® Gen IV | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17.4A (Ta), 65.3A (Tc) | 7.5V, 10V | 5.8mOhm @ 10A, 10V | 3.4V @ 250µA | 32 nC @ 10 V | ±20V | 1490 pF @ 30 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 | 
                 
                   
                
                 | 
				
                    TPH4R50ANH1,LQMOSFET 100V 4.5MOHM SOP-ADV(N)  |  
                6,077 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                U-MOSVIII-H | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 92A (Tc) | 10V | 4.5mOhm @ 46A, 10V | 4V @ 1mA | 58 nC @ 10 V | ±20V | 5200 pF @ 50 V | - | 800mW (Ta) | 150°C | - | - | Surface Mount | 8-SOP Advance (5x5.75) | 
                 
                   
                
                 | 
				
                    IPD80R750P7ATMA1MOSFET N-CH 800V 7A TO252-3  |  
                4,134 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17 nC @ 10 V | ±20V | 460 pF @ 500 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 | 
                 
                   
                
                 | 
				
                    IPD60R280PFD7SAUMA1MOSFET N-CH 600V 12A TO252-3  |  
                2,879 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                CoolMOS™ PFD7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 280mOhm @ 3.6A, 10V | 4.5V @ 180µA | 15.3 nC @ 10 V | ±20V | 656 pF @ 400 V | - | 51W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-344 | 
| 
                 
                   | 
				
                    STP10N60M2MOSFET N-CH 600V 7.5A TO220  |  
                689 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                MDmesh™ II Plus | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.5A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 13.5 nC @ 10 V | ±25V | 400 pF @ 100 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 | 
                 
                   
                
                 | 
				
                    IPD22N08S2L50ATMA1MOSFET N-CH 75V 27A TO252-3  |  
                9,994 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 27A (Tc) | 5V, 10V | 50mOhm @ 50A, 10V | 2V @ 31µA | 33 nC @ 10 V | ±20V | 630 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 | 
                 
                   
                
                 | 
				
                    PSMN2R0-30YLDXMOSFET N-CH 30V 100A LFPAK56  |  
                7,117 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                - | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 2mOhm @ 25A, 10V | 2.2V @ 1mA | 46 nC @ 10 V | ±20V | 2969 pF @ 15 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 | 
                 
                   
                
                 | 
				
                    SI4090BDY-T1-GE3N-CHANNEL 100-V (D-S) MOSFET SO-  |  
                7,063 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 12.2A (Ta), 18.7A (Tc) | 6V, 10V | 10mOhm @ 12.2A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 3570 pF @ 50 V | - | 3.1W (Ta), 7.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC | 
                 
                   
                
                 | 
				
                    IRF9530PBF-BE3MOSFET P-CH 100V 12A TO220AB  |  
                3,387 | 
                
                     | 
                 
                 
                
                  Техническая документация  | 
                  	
	
                
                - | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | - | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |