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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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SIR616DP-T1-GE3MOSFET N-CH 200V 20.2A PPAK SO-8 |
2,870 |
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Техническая документация |
ThunderFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 20.2A (Tc) | 7.5V, 10V | 50.5mOhm @ 10A, 10V | 4V @ 250µA | 28 nC @ 7.5 V | ±20V | 1450 pF @ 100 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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PSMN015-100YLXMOSFET N-CH 100V 69A LFPAK56 |
2,556 |
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Техническая документация |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 69A (Tc) | 5V, 10V | 14.7mOhm @ 20A, 10V | 2.1V @ 1mA | 86.3 nC @ 10 V | ±20V | 6139 pF @ 25 V | - | 195W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
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RD3L080SNFRATLMOSFET N-CH 60V 8A TO252 |
6,988 |
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Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Ta) | 4V, 10V | 80mOhm @ 8A, 10V | 2.5V @ 1mA | 9.4 nC @ 10 V | ±20V | 380 pF @ 10 V | - | 15W (Tc) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252 |
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RD3G03BATTL1PCH -40V -35A POWER MOSFET - RD3 |
4,298 |
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Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 35A (Tc) | 4.5V, 10V | 19.1mOhm @ 35A, 10V | 2.5V @ 1mA | 38 nC @ 10 V | ±20V | 2100 pF @ 20 V | - | 56W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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SIR188DP-T1-RE3MOSFET N-CH 60V 25.5A/60A PPAK |
2,574 |
|
Техническая документация |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25.5A (Ta), 60A (Tc) | 7.5V, 10V | 3.85mOhm @ 10A, 10V | 3.6V @ 250µA | 44 nC @ 10 V | ±20V | 1920 pF @ 30 V | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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STD10N60DM2MOSFET N-CH 650V 8A DPAK |
2,263 |
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Техническая документация |
MDmesh™ DM2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 10V | 530mOhm @ 4A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±25V | 529 pF @ 100 V | - | 109W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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STD35NF06T4MOSFET N-CH 60V 35A DPAK |
4,632 |
|
Техническая документация |
STripFET™ II | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 35A (Tc) | 10V | 20mOhm @ 17.5A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
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CSD17577Q5ATMOSFET N-CH 30V 60A 8VSON |
2,759 |
|
Техническая документация |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Ta) | 4.5V, 10V | 4.2mOhm @ 18A, 10V | 1.8V @ 250µA | 35 nC @ 10 V | ±20V | 2310 pF @ 15 V | - | 3W (Ta), 53W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSONP (5x6) |
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SQ4483EY-T1_GE3MOSFET P-CHANNEL 30V 30A 8SOIC |
2,418 |
|
Техническая документация |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 113 nC @ 10 V | ±20V | 4500 pF @ 15 V | - | 7W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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SQJ460AEP-T1_GE3MOSFET N-CH 60V 32A PPAK SO-8 |
1,815 |
|
Техническая документация |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 32A (Tc) | 4.5V, 10V | 9.6mOhm @ 18A, 10V | 2.5V @ 250µA | 106 nC @ 10 V | ±20V | 4795 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SQ4483EY-T1_BE3MOSFET P-CHANNEL 30V 30A 8SOIC |
1,552 |
|
Техническая документация |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 113 nC @ 10 V | ±20V | 4500 pF @ 15 V | - | 7W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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CSD18503KCSMOSFET N-CH 40V 100A TO220-3 |
791 |
|
Техническая документация |
NexFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 4.5mOhm @ 75A, 10V | 2.3V @ 250µA | 36 nC @ 10 V | ±20V | 3150 pF @ 20 V | - | 188W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IPP50R280CEXKSA1MOSFET N-CH 500V 13A TO220-3 |
323 |
|
Техническая документация |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6 nC @ 10 V | ±20V | 773 pF @ 100 V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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STL60N10F7MOSFET N-CH 100V 46A POWERFLAT |
14,477 |
|
Техническая документация |
DeepGATE™, STripFET™ VII | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 46A (Tc) | 10V | 18mOhm @ 6A, 10V | 4.5V @ 250µA | 25 nC @ 10 V | 20V | 1640 pF @ 50 V | - | 5W (Ta), 72W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerFlat™ (5x6) |
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PSMN3R2-40YLDXMOSFET N-CH 40V 120A LFPAK56 |
2,828 |
|
Техническая документация |
TrenchMOS™ | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 3.3mOhm @ 25A, 10V | 2.05V @ 1mA | 57 nC @ 10 V | ±20V | 4103 pF @ 20 V | Schottky Diode (Body) | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
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IPD80R2K7C3AATMA1MOSFET N-CH TO252-3 |
2,495 |
|
Техническая документация |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 2.7Ohm @ 1.2A, 10V | 3.9V @ 250µA | 1.5 nC @ 10 V | ±20V | 290 pF @ 100 V | - | 42W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA (DPAK) |
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SIR606DP-T1-GE3MOSFET N-CH 100V 37A PPAK SO-8 |
5,082 |
|
Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 37A (Tc) | 6V, 10V | 16.2mOhm @ 15A, 10V | 3.6V @ 250µA | 22 nC @ 6 V | ±20V | 1360 pF @ 50 V | - | 44.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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NVMFS9D6P04M8LT1GMV8 P-CH 40V SO-8FL PORTFOLIO EX |
3,410 |
|
Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 17.1A (Ta), 77A (Tc) | 4.5V, 10V | 9.5mOhm @ 20A, 10V | 2.4V @ 580µA | 14.47 nC @ 10 V | ±20V | 2002 pF @ 20 V | - | 3.7W (Ta), 75W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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PSMN1R7-25YLDXMOSFET N-CH 25V 100A LFPAK56 |
1,500 |
|
Техническая документация |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 100A (Tc) | 4.5V, 10V | 1.7mOhm @ 25A, 10V | 2.2V @ 1mA | 46.7 nC @ 10 V | ±20V | 3415 pF @ 12 V | Schottky Diode (Body) | 135W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
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IRFU220PBFMOSFET N-CH 200V 4.8A TO251AA |
1,496 |
|
Техническая документация |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
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