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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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C3M0025065J1-TRSIC, MOSFET 25 M, 650V TO-263-7X |
780 |
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Техническая документация |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 80A (Tc) | 15V | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | 109 nC @ 15 V | +19V, -8V | 2980 pF @ 400 V | - | 271W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7 |
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NVHL015N065SC1SIC MOS TO247-3L 650V |
447 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 163A (Tc) | 15V, 18V | 18mOhm @ 75A, 12V | 4.3V @ 25mA | 283 nC @ 18 V | +22V, -8V | 4790 pF @ 325 V | - | 643W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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E3M0021120J2-TR21m, 1200V SiC FET, TO-263-7 XL |
488 |
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Техническая документация |
E | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 114A (Tc) | 15V | 29mOhm @ 62.12A, 15V | 3.8V @ 17.1mA | 169 nC @ 15 V | +19V, -8V | 5100 pF @ 1000 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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AIMZA75R008M1HXKSA1AUTOMOTIVE_SICMOS |
240 |
|
Техническая документация |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 163A (Tc) | 15V, 20V | 7.2mOhm @ 90.3A, 20V | 5.6V @ 32.4mA | 178 nC @ 18 V | +23V, -5V | 6137 pF @ 500 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-U02 |
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IMZA75R008M1HXKSA1SILICON CARBIDE MOSFET |
240 |
|
Техническая документация |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 163A (Tc) | 15V, 20V | 7.2mOhm @ 90.3A, 20V | 5.6V @ 32.4mA | 178 nC @ 500 V | +23V, -5V | 6137 pF @ 500 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-U02 |
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NCV81342CBATXGMOSFET |
1,000 |
|
Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPD030N03LF2SATMA1MOSFET N-CH 30V 160A DPAK |
2,000 |
|
Техническая документация |
StrongIRFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 99A (Tc) | 4.5V, 10V | 3.05mOhm @ 60A, 10V | 2.35V @ 40µA | 50 nC @ 10 V | ±20V | 2200 pF @ 15 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-34 |
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APT60M75L2FLLGMOSFET N-CH 600V 73A 264 MAX |
4,653 |
|
Техническая документация |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 893W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 264 MAX™ [L2] |
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C3M0016120K1MOSFET N-CH 1200V 125A TO247-4L |
325 |
|
Техническая документация |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 125A (Tc) | 15V | 22mOhm @ 80.28A, 15V | 3.8V @ 22.08mA | 223 nC @ 15 V | +19V, -8V | 6922 pF @ 1000 V | - | 483W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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APL502B2GMOSFET N-CH 500V 58A T-MAX |
106 |
|
Техническая документация |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 15V | 90mOhm @ 29A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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DIW120SIC022-AQSIC MOSFET, TO-247-3L, N, 120A, |
150 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 120A (Tc) | 18V | 22.3mOhm @ 75A, 18V | 4V @ 23.5mA | 269 nC @ 18 V | +18V, -4V | 4817 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
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DIF120SIC022-AQSIC MOSFET, TO-247-4L, N, 120A, |
150 |
|
Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 120A (Tc) | 18V | 22.3mOhm @ 75A, 18V | 4V @ 23.5mA | 269 nC @ 18 V | +18V, -4V | 4817 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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TW015Z120C,S1FG3 1200V SIC-MOSFET TO-247-4L 1 |
1,290 |
|
Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V | 21mOhm @ 50A, 18V | 5V @ 11.7mA | 158 nC @ 18 V | +25V, -10V | 6000 pF @ 800 V | - | 431W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
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IXFN55N120SKSIC AND MULTICHIP DISCRETE |
182 |
|
Техническая документация |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 54A (Tc) | 15V | 42mOhm @ 40A, 15V | 3.6V @ 12mA | 107 nC @ 15 V | +15V, -4V | 3360 pF @ 1000 V | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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DIW120SIC023-AQMOSFET TO-247-3L N 130A 1200V |
705 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 125A (Tc) | 18V | 23mOhm @ 75A, 18V | 2.9V @ 250µA | 45 nC @ 18 V | - | 6150 pF @ 1000 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
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DF17MR12W1M1HFB68BPSA1LOW POWER EASY |
1,579 |
|
Техническая документация |
EasyPACK™ | Module | Tray | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 45A (Tj) | 15V, 18V | 16.2mOhm @ 50A, 18V | 5.15V @ 20mA | 149 nC @ 18 V | +20V, -7V | 4400 pF @ 800 V | - | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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CDA04N30X1CGANFET 40V 30A .004 OHM 4DAPT |
3,663 |
|
Техническая документация |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CDA10N30X1CGANFET 100V 30A .009 OHM 4DAPT |
100 |
|
Техническая документация |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CDA10N05X2CGANFET 100V 5A .030 OHM 4DAPT |
100 |
|
Техническая документация |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CDA20N18X3CGANFET 200V 18A .025 OHM 4DAPT |
2,544 |
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Техническая документация |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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