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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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DMTH61M5SPSW-13MOSFET BVDSS: 41V~60V POWERDI506 |
1,909 |
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Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 225A (Tc) | 10V | 1.5mOhm @ 30A, 10V | 4V @ 250µA | 130.6 nC @ 10 V | ±20V | 8306 pF @ 30 V | - | 3.2W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerDI5060-8 (SWP) |
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NVMFS5C456NWFT1GMOSFET N-CH 40V 20A/80A 5DFN |
1,500 |
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Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Ta), 80A (Tc) | 10V | 4.5mOhm @ 35A, 10V | 3.5V @ 250µA | 18 nC @ 10 V | ±20V | 1150 pF @ 25 V | - | 3.6W (Ta), 55W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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NVMFWS005N10MCLT1GPTNG 100V LL SO8FL |
300 |
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Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18.4A (Ta), 108A (Tc) | 4.5V, 10V | 5.1mOhm @ 34A, 10V | 3V @ 192µA | 55 nC @ 10 V | ±20V | 4100 pF @ 50 V | - | 3.8W (Ta), 131W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
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PJQ5572A-AU_R2_002A1100V N-CHANNEL ENHANCEMENT MODE |
3,000 |
|
Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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XP6NA2R4ITMOSFET N-CH 60V 93A TO220CFM |
1,000 |
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Техническая документация |
XP6NA2R4 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 93A (Tc) | 10V | 2.4mOhm @ 40A, 10V | 4V @ 250µA | 192 nC @ 10 V | ±20V | 11600 pF @ 50 V | - | 1.92W (Ta), 34.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220CFM |
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IPA60R210CFD7XKSA1LOW POWER_NEW |
500 |
|
Техническая документация |
- | - | Tube | Active | - | - | - | 7A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - |
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TPH4R606NH,L1QMOSFET N-CH 60V 32A 8SOP |
4,625 |
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Техническая документация |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 32A (Ta) | 6.5V, 10V | 4.6mOhm @ 16A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3965 pF @ 30 V | - | 1.6W (Ta), 63W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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PJD45P03E-AU_L2_006A130V P-CHANNEL ENHANCEMENT MODE M |
3,000 |
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Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 11.2A (Ta), 42A (Tc) | 4.5V, 10V | 15mOhm @ 20A, 10V | 2.5V @ 250µA | 32 nC @ 10 V | ±25V | 1270 pF @ 25 V | - | 3W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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MCB95N04YHE3-TPN-CHANNEL MOSFET,D2-PAK |
1,595 |
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Техническая документация |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 95A (Tc) | 10V | 3mOhm @ 20A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 2138 pF @ 20 V | - | 83W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
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NVMFS4C03NWFT1GMOSFET N-CH 30V 31.4A/143A 5DFN |
1,422 |
|
Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 31.4A (Ta), 143A (Tc) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.2V @ 250µA | 45.2 nC @ 10 V | ±20V | 3071 pF @ 15 V | - | 3.71W (Ta), 77W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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XP10N3R8PMOSFET N-CH 100V 130A TO220 |
991 |
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Техническая документация |
XP10N3R8 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 130A (Tc) | 10V | 3.88mOhm @ 60A, 10V | 4V @ 250µA | 136 nC @ 10 V | ±20V | 6560 pF @ 80 V | - | 2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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NTMYS6D2N06CLTWGMOSFET N-CH 60V 4LFPAK |
3,000 |
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Техническая документация |
- | SOT-1023, 4-LFPAK | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Ta), 71A (Tc) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | LFPAK4 (5x6) |
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DMP22M2UPS-13MOSFET P-CH 20V 60A PWRDI5060-8 |
2,250 |
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Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Tc) | 2.5V, 10V | 2.5mOhm @ 25A, 10V | 1.4V @ 250µA | 476 nC @ 10 V | ±12V | 12826 pF @ 10 V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerDI5060-8 (Type K) |
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IPI65R380C6XKSA1MOSFET N-CH 650V 10.6A TO262-3 |
500 |
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Техническая документация |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPAN60R180CM8XKSA1IPAN60R180CM8XKSA1 |
256 |
|
Техническая документация |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Tj) | 10V | 180mOhm @ 5.6A, 10V | 4.7V @ 140µA | 17 nC @ 10 V | ±20V | 743 pF @ 400 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
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IPP60R180CM8XKSA1IPP60R180CM8XKSA1 |
135 |
|
Техническая документация |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4.7V @ 140µA | 17 nC @ 10 V | ±20V | 743 pF @ 400 V | - | 142W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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TK7P60W,RVQMOSFET N CH 600V 7A DPAK |
1,988 |
|
Техническая документация |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Ta) | 10V | 600mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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CDMSJ2207.3-650 SLSUPER JUNCTION MOSFETS |
500 |
|
Техническая документация |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 4V @ 250µA | 17 nC @ 10 V | 30V | 554 pF @ 400 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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NVMJS1D2N04CLTWGMOSFET N-CH 40V 41A/237A 8LFPAK |
2,990 |
|
Техническая документация |
- | SOT-1205, 8-LFPAK56 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 41A (Ta), 237A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 170µA | 93 nC @ 10 V | ±20V | 5600 pF @ 25 V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-LFPAK |
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RD3G08CBLHRBTLNCH 40V 80A, TO-252 (DPAK), POWE |
2,500 |
|
Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 6V, 10V | 3.2mOhm @ 80A, 10V | 4V @ 924µA | 42 nC @ 10 V | ±20V | 2800 pF @ 20 V | - | 96W (Tc) | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252 |
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