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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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PSMQC098N10LS2_R2_00201100V/ 9.8M/ EXCELLECT LOW FOM MO |
5,980 |
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Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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MCU90N04YHE3-TPN-CHANNEL MOSFET,DPAK |
5,000 |
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Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 3.1mOhm @ 20A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 2124 pF @ 20 V | - | 83W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252 (DPAK) |
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MCU75N06YHE3-TPN-CHANNEL MOSFET,DPAK |
4,912 |
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Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.5V @ 250µA | 34.5 nC @ 10 V | ±20V | 1698 pF @ 30 V | - | 100W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252 (DPAK) |
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NTMFSC011N08M7MV7 80V SG 10MOHM PQFN56DC |
2,990 |
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Техническая документация |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 12.5A (Ta), 61A (Tc) | 10V | 10mOhm @ 10A, 10V | 4.5V @ 120µA | 38 nC @ 10 V | ±20V | 2700 pF @ 40 V | - | 3.3W (Ta), 78.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6.15) |
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NVMYS2D4N04CTWGMOSFET N-CH 40V 30A/138A LFPAK4 |
2,980 |
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Техническая документация |
- | SOT-1023, 4-LFPAK | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 30A (Ta), 138A (Tc) | 10V | 2.3mOhm @ 50A, 10V | 3.5V @ 90µA | 32 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 3.9W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | LFPAK4 (5x6) |
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IRFR9014PBF-BE3P-CHANNEL 60V |
2,968 |
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Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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PSMN3R3-80YSFXPSMN3R3-80YSF/SOT669/LFPAK |
1,490 |
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Техническая документация |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 160A (Tc) | 10V | 3.1mOhm @ 25A, 10V | 4V @ 1mA | 108 nC @ 10 V | ±20V | 6986 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
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STL58N3LLH5MOSFET N-CH 30V 64A POWERFLAT |
3,000 |
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Техническая документация |
STripFET™ H5 | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 64A (Tc) | 4.5V, 10V | 9mOhm @ 7.5A, 10V | 2.5V @ 250µA | 10 nC @ 4.5 V | +22V, -20V | 950 pF @ 25 V | - | 4.8W (Ta), 62.5W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerFlat™ (5x6) |
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NVMFS5C677NLWFT1GMOSFET N-CH 60V 11A/36A 5DFN |
2,993 |
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Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Ta), 36A (Tc) | 4.5V, 10V | 15mOhm @ 10A, 10V | 2V @ 25µA | 9.7 nC @ 10 V | ±20V | 620 pF @ 25 V | - | 3.5W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
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DMT4002LPS-13MOSFET N-CH 40V 100A PWRDI5060-8 |
2,265 |
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Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Ta) | 4.5V, 10V | 1.8mOhm @ 25A, 10V | 3V @ 250µA | 116.1 nC @ 10 V | ±20V | 6771 pF @ 20 V | - | 2.3W | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerDI5060-8 (Type K) |
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ZXM64P03XTAMOSFET P-CH 30V 3.8A 8MSOP |
1,874 |
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Техническая документация |
- | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.8A (Ta) | 4.5V, 10V | 75mOhm @ 2.4A, 10V | 1V @ 250µA | 46 nC @ 10 V | ±20V | 825 pF @ 25 V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MSOP |
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PJD60P04E-AU_L2_006A140V P-CHANNEL ENHANCEMENT MODE M |
1,185 |
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Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 12A (Ta), 61A (Tc) | 4.5V, 10V | 11.3mOhm @ 20A, 10V | 2.5V @ 250µA | 56 nC @ 10 V | ±25V | 2897 pF @ 25 V | - | 3W (Ta), 75W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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NTTFS002N04CTAGMOSFET N-CH 40V 27A/136A 8WDFN |
1,450 |
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Техническая документация |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 27A (Ta), 136A (Tc) | 10V | 2.4mOhm @ 50A, 10V | 3.5V @ 90µA | 34 nC @ 10 V | ±20V | 2250 pF @ 25 V | - | 3.2W (Ta), 85W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-WDFN (3.3x3.3) |
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PSMN3R5-40YSDXMOSFET N-CH 40V 120A LFPAK56 |
1,366 |
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Техническая документация |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 3.5mOhm @ 25A, 10V | 3.6V @ 1mA | 19 nC @ 10 V | ±20V | 3245 pF @ 20 V | Schottky Diode (Body) | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
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SISS5112DN-T1-GE3N-CHANNEL 100 V (D-S) MOSFET POW |
11,904 |
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Техническая документация |
TrenchFET® | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta), 40.7A (Tc) | 7.5V, 10V | 14.9mOhm @ 10A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 790 pF @ 50 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
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ISZ173N15NM6ATMA1TRENCH >=100V |
4,965 |
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Техническая документация |
OptiMOS™ 6 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 7.9A (Ta), 48A (Tc) | 8V, 15V | 16.3mOhm @ 16A, 15V | 4V @ 35µA | 19.2 nC @ 10 V | ±20V | 1300 pF @ 75 V | - | 2.5W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 FL |
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PJD30N04S-AU_L2_002A140V N-CHANNEL ENHANCEMENT MODE M |
3,000 |
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Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 12.5A (Ta), 43A (Tc) | 4.5V, 10V | 10.6mOhm @ 20A, 10V | 2.3V @ 50µA | 13 nC @ 10 V | ±20V | 744 pF @ 25 V | - | 3W (Ta), 36W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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XP3N1R0MTFET N-CH 30V 54.2A 245A PMPAK |
998 |
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Техническая документация |
XP3N1R0 | 8-PowerLDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 54.2A (Ta), 245A (Tc) | 4.5V, 10V | 1.05mOhm @ 20A, 10V | 2.2V @ 250µA | 120 nC @ 4.5 V | ±20V | 12320 pF @ 15 V | - | 5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PMPAK® 5 x 6 |
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PSMN3R3-100SSFJNEXTPOWER 80/100V MOSFETS |
700 |
|
Техническая документация |
- | SOT-1235 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Ta) | 7V, 10V | 3.3mOhm @ 25A, 10V | 4V @ 1mA | 159 nC @ 10 V | ±20V | 9940 pF @ 50 V | - | 341W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK88 (SOT1235) |
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MCACL2D5N06YL-TPMOSFET N-CH 60 140A DFN5060 |
9,920 |
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Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 140A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2.5V @ 250µA | 71 nC @ 10 V | ±20V | 4320 pF @ 30 V | - | 114W (Tj) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN5060 |
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