Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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PJQ4574AP-AU_R2_002A1100V N-CHANNEL ENHANCEMENT MODE |
4,800 |
|
![]() Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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PJD30N15S-AU_L2_006A1150V N-CHANNEL ENHANCEMENT MODE |
3,000 |
|
![]() Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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PSMN1R7-40YLBXPSMN1R7-40YLB/SOT669/LFPAK |
1,500 |
|
![]() Техническая документация |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 4.5V, 10V | 1.8mOhm @ 25A, 10V | 2.05V @ 1mA | 111 nC @ 10 V | ±20V | 8138 pF @ 20 V | Schottky Diode (Body) | 194W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
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XP4N2R5MTFET N-CH 40V 33.8A 125A PMPAK |
1,000 |
|
![]() Техническая документация |
XP4N2R5 | 8-PowerLDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 33.8A (Ta), 125A (Tc) | 10V | 2.55mOhm @ 20A, 10V | 4V @ 250µA | 112 nC @ 10 V | ±20V | 6080 pF @ 20 V | - | 5W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PMPAK® 5 x 6 |
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NVMFSW6D1N08HT1GMOSFET N-CH 80V 17A/89A 5DFN |
9,495 |
|
![]() Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 17A (Ta), 89A (Tc) | 10V | 5.5mOhm @ 20A, 10V | 4V @ 120µA | 32 nC @ 10 V | ±20V | 2085 pF @ 40 V | - | 3.8W (Ta), 104W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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NVMYS2D1N04CLTWGMOSFET N-CH 40V 29A/132A LFPAK4 |
3,000 |
|
![]() Техническая документация |
- | SOT-1023, 4-LFPAK | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 29A (Ta), 132A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 2V @ 90µA | 50 nC @ 10 V | ±20V | 3100 pF @ 25 V | - | 3.9W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | LFPAK4 (5x6) |
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SIR166DP-T1-GE3MOSFET N-CH 30V 40A PPAK SO-8 |
2,380 |
|
![]() Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 3.2mOhm @ 15A, 10V | 2.2V @ 250µA | 77 nC @ 10 V | ±20V | 3340 pF @ 15 V | - | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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NVMFS4C310NWFT1GMOSFET N-CH 30V TRENCH |
1,500 |
|
![]() Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | 17A (Ta), 51A (Tc) | - | - | - | - | - | - | - | - | - | Automotive | AEC-Q101 | - | - |
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PSMN1R9-40YSBXPSMN1R9-40YSB/SOT669/LFPAK |
1,495 |
|
![]() Техническая документация |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 10V | 1.9mOhm @ 25A, 10V | 3.6V @ 1mA | 78 nC @ 10 V | ±20V | 6297 pF @ 20 V | Schottky Diode (Body) | 194W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
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NTMFS005P03P8ZST1GPT8P PORTFOLIO EXPANSION |
1,268 |
|
![]() Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 15.3A (Ta) | 4.5V, 10V | 2.7mOhm @ 22A, 10V | 3V @ 250µA | 183 nC @ 10 V | ±25V | 7880 pF @ 15 V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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SISS60DN-T1-GE3MOSFET N-CH 30V 50.1/181.8A PPAK |
5,995 |
|
![]() Техническая документация |
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50.1A (Ta), 181.8A (Tc) | 4.5V, 10V | 1.31mOhm @ 20A, 10V | 2.5V @ 250µA | 85.5 nC @ 10 V | +16V, -12V | 3960 pF @ 15 V | Schottky Diode (Body) | 5.1W (Ta), 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
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DI100N10PQMOSFET PWRQFN 5X6 100V 0.0045OHM |
4,792 |
|
![]() Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 3V @ 250µA | 64 nC @ 10 V | ±20V | 3400 pF @ 30 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-QFN (5x6) |
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SISS66DN-T1-GE3MOSFET N-CH 30V 49.1/178.3A PPAK |
4,562 |
|
![]() Техническая документация |
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 49.1A (Ta), 178.3A (Tc) | 4.5V, 10V | 1.38mOhm @ 20A, 10V | 2.5V @ 250µA | 85.5 nC @ 10 V | +20V, -16V | 3327 pF @ 15 V | Schottky Diode (Body) | 5.1W (Ta), 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
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RQ3G270BKFRATCBAUTOMOTIVE NCH 40V 27A POWER MOS |
3,475 |
|
![]() Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SIHU7N60E-GE3MOSFET N-CH 600V 7A IPAK |
2,990 |
|
![]() Техническая документация |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±30V | 680 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
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RQ3G270BJFRATCBPCH -40V -27A, HSMT8AG, POWER MO |
2,365 |
|
![]() Техническая документация |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 27A (Tc) | 4.5V, 10V | 22mOhm @ 27A, 10V | 2.5V @ 485µA | 32 nC @ 10 V | +5V, -20V | 1810 pF @ 20 V | - | 69W (Tc) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-HSMT (3.2x3) |
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STP5NK60ZFPMOSFET N-CH 600V 5A TO220FP |
1,970 |
|
![]() Техническая документация |
SuperMESH™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 1.6Ohm @ 2.5A, 10V | 4.5V @ 50µA | 34 nC @ 10 V | ±30V | 690 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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NVTFS005N04CTAGMOSFET N-CH 40V 17A/69A 8WDFN |
1,623 |
|
![]() Техническая документация |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 17A (Ta), 69A (Tc) | 10V | 5.6mOhm @ 35A, 10V | 3.5V @ 40µA | 16 nC @ 10 V | ±20V | 1000 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-WDFN (3.3x3.3) |
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XP10NA011JMOSFET N-CH 100V 48.5A TO251S |
962 |
|
![]() Техническая документация |
XS10NA011 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 48.5A (Tc) | 6V, 10V | 11mOhm @ 30A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 2288 pF @ 80 V | - | 1.13W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251S |
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NTMFS4D0N08XT1GT10 80V STD NCH MOSFET SO8FL |
273 |
|
![]() Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 119A (Tc) | 6V, 10V | 3.5mOhm @ 27A, 10V | 3.6V @ 133µA | 33 nC @ 10 V | ±20V | 2400 pF @ 40 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |