+86-0755-83179664
FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXKR47N60C5MOSFET N-CH 600V 47A ISOPLUS247 |
107 |
|
Техническая документация |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
SCT3060ALHRC11SICFET N-CH 650V 39A TO247N |
440 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 39A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58 nC @ 18 V | +22V, -4V | 852 pF @ 500 V | - | 165W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
|
IXFB132N50P3MOSFET N-CH 500V 132A PLUS264 |
275 |
|
Техническая документация |
HiPerFET™, Polar3™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 132A (Tc) | 10V | 39mOhm @ 66A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 18600 pF @ 25 V | - | 1890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
|
IXTN200N10TMOSFET N-CH 100V 200A SOT227B |
270 |
|
Техническая документация |
Trench | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 5.5mOhm @ 50A, 10V | 4.5V @ 250µA | 152 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
STY60NM50MOSFET N-CH 500V 60A MAX247 |
584 |
|
Техническая документация |
MDmesh™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 266 nC @ 10 V | ±30V | 7500 pF @ 25 V | - | 560W (Tc) | 150°C (TJ) | - | - | Through Hole | MAX247™ |
|
|
IXFK32N80Q3MOSFET N-CH 800V 32A TO264AA |
442 |
|
Техническая документация |
HiPerFET™, Q3 Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 32A (Tc) | 10V | 270mOhm @ 16A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 6940 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
MSC040SMA120S/TRMOSFET SIC 1200 V 40 MOHM TO-268 |
397 |
|
Техническая документация |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.6V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 303W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268 |
|
|
IXTN32P60PMOSFET P-CH 600V 32A SOT227B |
296 |
|
Техническая документация |
PolarP™ | SOT-227-4, miniBLOC | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 350mOhm @ 500mA, 10V | 4V @ 1mA | 196 nC @ 10 V | ±20V | 11100 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
SCT2080KEHRC11SICFET N-CH 1200V 40A TO247N |
16,500 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106 nC @ 18 V | +22V, -6V | 2080 pF @ 800 V | - | - | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
|
|
NVBG025N065SC1SIC MOS D2PAK-7L 650V |
790 |
|
Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 106A (Tc) | 15V, 18V | 28.5mOhm @ 45A, 18V | 4.3V @ 15.5mA | 164 nC @ 18 V | - | 3480 pF @ 325 V | - | 395W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
|
|
AIMW120R060M1HXKSA11200V COOLSIC MOSFET PG-TO247-3 |
220 |
|
Техническая документация |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.7V @ 5.6mA | 31 nC @ 18 V | +23V, -7V | 1060 pF @ 800 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
|
|
IXFK360N15T2MOSFET N-CH 150V 360A TO264AA |
297 |
|
Техническая документация |
HiPerFET™, TrenchT2™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 360A (Tc) | 10V | 4mOhm @ 60A, 10V | 5V @ 8mA | 715 nC @ 10 V | ±20V | 47500 pF @ 25 V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
C3M0040120J1-TR1200V 40 M SIC MOSFET |
1,382 |
|
Техническая документация |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A (Tc) | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | 94 nC @ 15 V | +15V, -4V | 2900 pF @ 1000 V | - | 272W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
IXFN160N30TMOSFET N-CH 300V 130A SOT227B |
490 |
|
Техническая документация |
HiPerFET™, Trench | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 130A (Tc) | 10V | 19mOhm @ 60A, 10V | 5V @ 8mA | 335 nC @ 10 V | ±20V | 28000 pF @ 25 V | - | 900W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
NVH4L022N120M3SSIC MOS TO247-4L 22MOHM 1200V |
820 |
|
Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 18V | 30mOhm @ 40A, 18V | 4.4V @ 20mA | 151 nC @ 18 V | +22V, -10V | 3175 pF @ 800 V | - | 352W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
IXFK52N100XMOSFET N-CH 1000V 52A TO264 |
265 |
|
Техническая документация |
HiPerFET™, Ultra X | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 52A (Tc) | 10V | 125mOhm @ 26A, 10V | 6V @ 4mA | 245 nC @ 10 V | ±30V | 6725 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 |
|
NVHL020N090SC1SICFET N-CH 900V 118A TO247-3 |
168 |
|
Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 118A (Tc) | 15V | 28mOhm @ 60A, 15V | 4.3V @ 20mA | 196 nC @ 15 V | +19V, -10V | 4415 pF @ 450 V | - | 503W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
|
|
IXFB44N100PMOSFET N-CH 1000V 44A PLUS264 |
300 |
|
Техническая документация |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 44A (Tc) | 10V | 220mOhm @ 22A, 10V | 6.5V @ 1mA | 305 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
|
|
IXFN210N30P3MOSFET N-CH 300V 192A SOT227B |
300 |
|
Техническая документация |
HiPerFET™, Polar3™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 192A (Tc) | 10V | 14.5mOhm @ 105A, 10V | 5V @ 8mA | 268 nC @ 10 V | ±20V | 16200 pF @ 25 V | - | 1500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXKK85N60CMOSFET N-CH 600V 85A TO264A |
138 |
|
Техническая документация |
CoolMOS™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 85A (Tc) | 10V | 36mOhm @ 55A, 10V | 4V @ 4mA | 650 nC @ 10 V | ±20V | - | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA |
Связаться с нами
Получите больше информации о продукте!
- Низкие цены каждый день, беззаботный выбор
- Аутентичные лицензионные товары
- Доставка напрямую из нескольких складов, быстрая доставка
- Полный ассортимент для легких покупок
