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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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IXFN80N50PMOSFET N-CH 500V 66A SOT227B |
1,956 |
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Техническая документация |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 66A (Tc) | 10V | 65mOhm @ 500mA, 10V | 5V @ 8mA | 195 nC @ 10 V | ±30V | 12700 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXTN110N20L2MOSFET N-CH 200V 100A SOT227B |
308 |
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Техническая документация |
Linear L2™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | 10V | 24mOhm @ 55A, 10V | 4.5V @ 3mA | 500 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXTX90N25L2MOSFET N-CH 250V 90A PLUS247-3 |
442 |
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Техническая документация |
Linear L2™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 90A (Tc) | 10V | 33mOhm @ 45A, 10V | 4.5V @ 3mA | 640 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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MKE38RK600DFEL-TRRMOSFET N-CH 600V 50A SMPD |
200 |
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Техническая документация |
CoolMOS™ | 9-SMD Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | ISOPLUS-SMPD™.B |
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IXFK32N100Q3MOSFET N-CH 1000V 32A TO264AA |
694 |
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Техническая документация |
HiPerFET™, Q3 Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 320mOhm @ 16A, 10V | 6.5V @ 8mA | 195 nC @ 10 V | ±30V | 9940 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXTX46N50LMOSFET N-CH 500V 46A PLUS247-3 |
686 |
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Техническая документация |
Linear | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 20V | 160mOhm @ 500mA, 20V | 6V @ 250µA | 260 nC @ 15 V | ±30V | 7000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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IXFN120N65X2MOSFET N-CH 650V 108A SOT227B |
528 |
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Техническая документация |
HiPerFET™, Ultra X2 | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 108A (Tc) | 10V | 24mOhm @ 54A, 10V | 5.5V @ 8mA | 225 nC @ 10 V | ±30V | 15500 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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MSC025SMA120SSICFET N-CH 1.2KV 100A D3PAK |
127 |
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Техническая документация |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 89A (Tc) | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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IXFB30N120PMOSFET N-CH 1200V 30A PLUS264 |
448 |
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Техническая документация |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 30A (Tc) | 10V | 350mOhm @ 500mA, 10V | 6.5V @ 1mA | 310 nC @ 10 V | ±20V | 22500 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
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IXFN360N15T2MOSFET N-CH 150V 310A SOT227B |
250 |
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Техническая документация |
HiPerFET™, TrenchT2™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 310A (Tc) | 10V | 4mOhm @ 60A, 10V | 5V @ 8mA | 715 nC @ 10 V | ±20V | 47500 pF @ 25 V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN38N100PMOSFET N-CH 1000V 38A SOT-227B |
270 |
|
Техническая документация |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 38A (Tc) | 10V | 210mOhm @ 19A, 10V | 6.5V @ 1mA | 350 nC @ 10 V | ±30V | 24000 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IXFN300N20X3MOSFET N-CH 200V 300A SOT227B |
271 |
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Техническая документация |
HiPerFET™, Ultra X3 | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 300A (Tc) | 10V | 3.5mOhm @ 150A, 10V | 4.5V @ 8mA | 375 nC @ 10 V | ±20V | 23800 pF @ 25 V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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SCT3030KLGC11SICFET N-CH 1200V 72A TO247N |
265 |
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Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 72A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 131 nC @ 18 V | +22V, -4V | 2222 pF @ 800 V | - | 339W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247N |
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TW015N120C,S1FG3 1200V SIC-MOSFET TO-247 15MO |
2,793 |
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Техническая документация |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V | 20mOhm @ 50A, 18V | 5V @ 11.7mA | 158 nC @ 18 V | +25V, -10V | 6000 pF @ 800 V | - | 431W (Tc) | 175°C | - | - | Through Hole | TO-247 |
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APT50M38JLLMOSFET N-CH 500V 88A ISOTOP |
1,619 |
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Техническая документация |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 88A (Tc) | 10V | 38mOhm @ 44A, 10V | 5V @ 5mA | 270 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT10021JFLLMOSFET N-CH 1000V 37A ISOTOP |
3,480 |
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Техническая документация |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395 nC @ 10 V | ±30V | 9750 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT12040JVRMOSFET N-CH 1200V 26A SOT227 |
1,763 |
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Техническая документация |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 26A (Tc) | 10V | 400mOhm @ 13A, 10V | 4V @ 5mA | 1200 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
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MSCSM120SKM31CTBL1NGPM-MOSFET-SIC-SBD-BL1 |
2,867 |
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Техническая документация |
- | Module | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 79A | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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FBG04N30BCGAN FET HEMT 40V30A COTS 4FSMD-B |
141 |
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Техническая документация |
FSMD-B | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 40 V | 30A (Tc) | 5V | 9mOhm @ 30A, 5V | 2.5V @ 9mA | 11.4 nC @ 5 V | +6V, -4V | 1300 pF @ 20 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
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EPC7003ACGAN FET HEMT 100V 5A COTS 4UB |
138 |
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Техническая документация |
- | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 10A (Tc) | 10V | 42mOhm @ 10A, 5V | 2.5V @ 1.4mA | 1.5 nC @ 5 V | +6V, -4V | 168 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
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