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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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STF5N95K5MOSFET N-CH 950V 3.5A TO220FP |
728 |
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Техническая документация |
SuperMESH5™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 3.5A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 5V @ 100µA | 12.5 nC @ 10 V | ±30V | 220 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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IRLR3636TRLPBFMOSFET N-CH 60V 50A DPAK |
705 |
|
Техническая документация |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49 nC @ 4.5 V | ±16V | 3779 pF @ 50 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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FDMC008N08CMOSFET N-CHANNEL 80V 60A 8PQFN |
649 |
|
Техническая документация |
PowerTrench® | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 60A (Tc) | 6V, 10V | 7.8mOhm @ 21A, 10V | 4V @ 120µA | 29 nC @ 10 V | ±20V | 2150 pF @ 40 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (3.3x3.3), Power33 |
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SIS402DN-T1-GE3MOSFET N-CH 30V 35A PPAK1212-8 |
4,782 |
|
Техническая документация |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 6mOhm @ 19A, 10V | 2.2V @ 250µA | 42 nC @ 10 V | ±20V | 1700 pF @ 15 V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SI7190ADP-T1-RE3MOSFET N-CH 250V 4.3A/14.4A PPAK |
4,540 |
|
Техническая документация |
ThunderFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 4.3A (Ta), 14.4A (Tc) | 7.5V, 10V | 102mOhm @ 4.3A, 10V | 4V @ 250µA | 22.4 nC @ 10 V | ±20V | 860 pF @ 100 V | - | 5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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PHB45NQ10T,118MOSFET N-CH 100V 47A D2PAK |
3,378 |
|
Техническая документация |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 47A (Tc) | 10V | 25mOhm @ 25A, 10V | 4V @ 1mA | 61 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
BSC120N12LSGATMA1TRENCH >=100V PG-TDSON-8 |
2,427 |
|
Техническая документация |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 10A (Ta), 68A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 2.4V @ 72µA | 51 nC @ 10 V | ±20V | 4900 pF @ 60 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 |
|
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SI7464DP-T1-E3MOSFET N-CH 200V 1.8A PPAK SO-8 |
2,034 |
|
Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 1.8A (Ta) | 6V, 10V | 240mOhm @ 2.8A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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STB60NF06T4MOSFET N-CH 60V 60A D2PAK |
1,683 |
|
Техническая документация |
STripFET™ II | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 16mOhm @ 30A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 1810 pF @ 25 V | - | 110W (Tc) | -65°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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STF10N95K5MOSFET N-CH 950V 8A TO220FP |
1,073 |
|
Техническая документация |
SuperMESH5™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 8A (Tc) | 10V | 800mOhm @ 4A, 10V | 5V @ 100µA | 22 nC @ 10 V | ±30V | 630 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
|
FDP3672MOSFET N-CH 105V 5.9A/41A TO220 |
312 |
|
Техническая документация |
PowerTrench® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 105 V | 5.9A (Ta), 41A (Tc) | 6V, 10V | 33mOhm @ 41A, 10V | 4V @ 250µA | 37 nC @ 10 V | ±20V | 1670 pF @ 25 V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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MCB85N06Y-TPMOSFET N-CH 60V 85A D2PAK |
25,637 |
|
Техническая документация |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 85A (Tc) | 10V | 13mOhm @ 30A, 10V | 2.4V @ 250µA | 36 nC @ 10 V | ±20V | 2498 pF @ 25 V | - | 85W | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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SI7892BDP-T1-E3MOSFET N-CH 30V 15A PPAK SO-8 |
5,556 |
|
Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 4.2mOhm @ 25A, 10V | 3V @ 250µA | 40 nC @ 4.5 V | ±20V | 3775 pF @ 15 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IPB65R660CFDAATMA1MOSFET N-CH 650V 6A D2PAK |
4,016 |
|
Техническая документация |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 660mOhm @ 3.2A, 10V | 4.5V @ 200µA | 20 nC @ 10 V | ±20V | 543 pF @ 100 V | - | 62.5W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
|
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IPB054N08N3GATMA1MOSFET N-CH 80V 80A D2PAK |
3,633 |
|
Техническая документация |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 5.4mOhm @ 80A, 10V | 3.5V @ 90µA | 69 nC @ 10 V | ±20V | 4750 pF @ 40 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IRF100B202MOSFET N-CH 100V 97A TO220AB |
1,919 |
|
Техническая документация |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 97A (Tc) | 10V | 8.6mOhm @ 58A, 10V | 4V @ 150µA | 116 nC @ 10 V | ±20V | 4476 pF @ 50 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
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SI7892BDP-T1-GE3MOSFET N-CH 30V 15A PPAK SO-8 |
1,251 |
|
Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 4.2mOhm @ 25A, 10V | 3V @ 250µA | 40 nC @ 4.5 V | ±20V | 3775 pF @ 15 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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BSZ014NE2LS5IFATMA1MOSFET N-CH 25V 31A/40A TSDSON |
26,690 |
|
Техническая документация |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 31A (Ta), 40A (Tc) | 4.5V, 10V | 1.45mOhm @ 20A, 10V | 2V @ 250µA | 33 nC @ 10 V | ±16V | 2300 pF @ 12 V | Schottky Diode (Body) | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
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SI7434ADP-T1-RE3MOSFET N-CH 250V 3.7A/12.3A PPAK |
5,853 |
|
Техническая документация |
ThunderFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 3.7A (Ta), 12.3A (Tc) | 7.5V, 10V | 150mOhm @ 3.7A, 10V | 4V @ 250µA | 16.5 nC @ 10 V | ±20V | 600 pF @ 125 V | - | 5W (Ta), 54.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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XPW6R30ANB,L1XHQMOSFET N-CH 100V 45A 8DSOP |
5,290 |
|
Техническая документация |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 45A (Ta) | 6V, 10V | 6.3mOhm @ 22.5A, 10V | 3.5V @ 500µA | 52 nC @ 10 V | ±20V | 3240 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | 175°C | - | - | Surface Mount | 8-DSOP Advance |
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