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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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IRF3007STRLPBFMOSFET N CH 75V 62A D2PAK |
3,095 |
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Техническая документация |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 62A (Tc) | 10V | 12.6mOhm @ 48A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3270 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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NTMFS5C612NLT1G-UIL5MOSFET N-CH 60V 36A/235A 5DFN |
1,204 |
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Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 36A (Ta), 235A (Tc) | 4.5V, 10V | 1.5mOhm @ 50A, 10V | 2V @ 250µA | 91 nC @ 10 V | ±20V | 6660 pF @ 25 V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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SIR872ADP-T1-RE3MOSFET N-CH 150V 53.7A PPAK SO-8 |
2,901 |
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Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 53.7A (Tc) | 7.5V, 10V | 18mOhm @ 20A, 10V | 4.5V @ 250µA | 47 nC @ 10 V | ±20V | 1286 pF @ 75 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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NVMFS6H801NLWFT1GMOSFET N-CH 80V 24A/160A 5DFN |
1,400 |
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Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 24A (Ta), 160A (Tc) | 4.5V, 10V | 2.7mOhm @ 50A, 10V | 2V @ 250µA | 90 nC @ 10 V | ±20V | 5126 pF @ 40 V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
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NTMFS0D5N04XMT1G40V T10M IN S08FL HEFET GEN 2 PA |
1,255 |
|
Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 414A (Tc) | 10V | 0.52mOhm @ 50A, 10V | 3.5V @ 240µA | 97.5 nC @ 10 V | ±20V | 6267 pF @ 20 V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) |
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IPB80N06S209ATMA2MOSFET N-CH 55V 80A TO263-3 |
777 |
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Техническая документация |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8.8mOhm @ 50A, 10V | 4V @ 125µA | 80 nC @ 10 V | ±20V | 2360 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPA65R310CFDXKSA2MOSFET N-CH 650V 11.4A TO220 |
536 |
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Техническая документация |
CoolMOS™ CFD2 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPP65R310CFDXKSA2MOSFET N-CH 650V 11.4A TO220-3 |
500 |
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Техническая документация |
CoolMOS™ CFD2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPI60R190C6XKSA1MOSFET N-CH 600V 20.2A TO262-3 |
495 |
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Техническая документация |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | ±20V | 1400 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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PJD60N04S-AU_L2_002A140V N-CHANNEL ENHANCEMENT MODE M |
2,840 |
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Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 22.5A (Ta), 140A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 2.3V @ 50µA | 41 nC @ 10 V | ±20V | 2862 pF @ 25 V | - | 3W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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STI20N65M5MOSFET N-CH 650V 18A I2PAK |
1,000 |
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Техническая документация |
MDmesh™ V | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±25V | 1434 pF @ 100 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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MCP70N15YA-BPN-CHANNEL MOSFET,TO-220AB(H) |
4,994 |
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Техническая документация |
- | TO-220-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 70A (Tc) | 10V | 21mOhm @ 35A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±20V | 2511 pF @ 75 V | - | 136W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB (H) |
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MCGWF20P06YHE3-TPPOWER MOSFET |
3,400 |
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Техническая документация |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 1483 pF @ 25 V | - | 39W (Tj) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DFN3333-8 |
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PSMP032N08NS1_T0_0060180V/ 3.4MOHM / TJMAX 175C MV MOS |
1,966 |
|
Техническая документация |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 166A (Tc) | 7V, 10V | 3.4mOhm @ 50A, 10V | 3.75V @ 250µA | 76 nC @ 7 V | ±20V | 7430 pF @ 40 V | - | 156W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB-L |
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IPU95R450P7AKMA1MOSFET N-CH 950V 14A TO251-3 |
1,500 |
|
Техническая документация |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 14A (Tc) | 10V | 450mOhm @ 7.2A, 10V | 3.5V @ 360µA | 35 nC @ 10 V | ±20V | 1053 pF @ 400 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPP076N15N5XKSA1TRENCH >=100V |
500 |
|
Техническая документация |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 112A (Tc) | 8V, 10V | 7.6mOhm @ 56A, 10V | 4.6V @ 160µA | 61 nC @ 10 V | ±20V | 4700 pF @ 75 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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SIDR608DP-T1-RE3MOSFET N-CH 45V 51A/208A PPAK |
6,000 |
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Техническая документация |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 51A (Ta), 208A (Tc) | 4.5V, 10V | 1.2mOhm @ 20A, 10V | 2.3V @ 250µA | 167 nC @ 10 V | +20V, -16V | 8900 pF @ 20 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8DC |
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NTMFSC006N12MC120V PTNG IN 5X6 DUALCOOL |
2,935 |
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Техническая документация |
DUAL COOL® | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 14A (Ta), 92A (Tc) | 10V | 6.1mOhm @ 44A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±20V | 3040 pF @ 60 V | - | 2.7W (Ta), 104W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6.15) |
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RS1N110ATTB1PCH -80V -43A, HSOP8, POWER MOSF |
2,500 |
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Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 11A (Ta), 43A (Tc) | 6V, 10V | 21mOhm @ 11A, 10V | 4V @ 1mA | 135 nC @ 10 V | ±20V | 5800 pF @ 40 V | - | 3W (Ta), 40W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
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NVMFS5C646NLWFAFT1GMOSFET N-CH 60V 20A/93A 5DFN |
1,475 |
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Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta), 93A (Tc) | 4.5V, 10V | 4.7mOhm @ 50A, 10V | 2V @ 250µA | 33.7 nC @ 10 V | ±20V | 2164 pF @ 25 V | - | 3.7W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
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