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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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IXTQ150N15PMOSFET N-CH 150V 150A TO3P |
129 |
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Техническая документация |
Polar | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 150A (Tc) | 10V | 13mOhm @ 500mA, 10V | 5V @ 250µA | 190 nC @ 10 V | ±20V | 5800 pF @ 25 V | - | 714W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3P |
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IXFP56N30X3MMOSFET N-CH 300V 56A TO220 |
331 |
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Техническая документация |
HiPerFET™, Ultra X3 | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 56A (Tc) | 10V | 27mOhm @ 28A, 10V | 4.5V @ 1.5mA | 56 nC @ 10 V | ±20V | 3750 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Isolated Tab |
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IPT60R045CFD7XTMA1MOSFET N-CH 600V 52A 8HSOF |
3,920 |
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Техническая документация |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Tc) | 10V | 45mOhm @ 18A, 10V | 4.5V @ 900µA | 79 nC @ 10 V | ±20V | 3194 pF @ 400 V | - | 270W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
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AUIRF7749L2TRMOSFET N-CH 60V 36A DIRECTFET |
6,741 |
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Техническая документация |
OptiMOS™ | DirectFET™ Isometric L8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 36A (Ta), 345A (Tc) | 10V | 1.5mOhm @ 120A, 10V | 4V @ 250µA | 275 nC @ 10 V | ±20V | 10655 pF @ 25 V | - | 3.8W (Ta), 341W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DirectFET™ Isometric L8 |
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IXFA56N30X3MOSFET N-CH 300V 56A TO263AA |
104 |
|
Техническая документация |
HiPerFET™, Ultra X3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 56A (Tc) | 10V | 27mOhm @ 28A, 10V | 4.5V @ 1.5mA | 56 nC @ 10 V | ±20V | 3750 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA (IXFA) |
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C3M0120065J650V 120M SIC MOSFET |
1,396 |
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Техническая документация |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 650 V | 21A (Tc) | 15V | 157mOhm @ 6.76A, 15V | 3.6V @ 1.86mA | 26 nC @ 15 V | +19V, -8V | 640 pF @ 400 V | - | 86W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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STW42N60M2-EPMOSFET N-CH 600V 34A TO247 |
444 |
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Техническая документация |
MDmesh™ M2-EP | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 87mOhm @ 17A, 10V | 4.75V @ 250µA | 55 nC @ 10 V | ±25V | 2370 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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NTH4L080N120SC1SICFET N-CH 1200V 29A TO247-4 |
380 |
|
Техническая документация |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 29A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1670 pF @ 800 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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FDMS86550ET60MOSFET N-CH 60V 32A/245A POWER56 |
2,036 |
|
Техническая документация |
PowerTrench® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 32A (Ta), 245A (Tc) | 8V, 10V | 1.65mOhm @ 32A, 10V | 4.5V @ 250µA | 154 nC @ 10 V | ±20V | 8235 pF @ 30 V | - | 3.3W (Ta), 187W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFP4468PBFXKMA1TRENCH >=100V PG-TO247-3 |
300 |
|
Техническая документация |
HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 290A (Tc) | 10V | 2.6mOhm @ 180A, 10V | 4V @ 250µA | 540 nC @ 10 V | ±20V | 19860 pF @ 50 V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IPW60R099CPFKSA1MOSFET N-CH 650V 31A TO247-3 |
265 |
|
Техническая документация |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80 nC @ 10 V | ±20V | 2800 pF @ 100 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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EPC2030GANFET NCH 40V 31A DIE |
2,938 |
|
Техническая документация |
eGaN® | Die | Tape & Reel (TR) | Not For New Designs | N-Channel | GaNFET (Gallium Nitride) | 40 V | 31A (Ta) | - | 2.4mOhm @ 30A, 5V | 2.5V @ 16mA | 18 nC @ 5 V | - | 1900 pF @ 20 V | - | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
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IXTA32P20TMOSFET P-CH 200V 32A TO263 |
291 |
|
Техническая документация |
TrenchP™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 32A (Tc) | 10V | 130mOhm @ 16A, 10V | 4V @ 250µA | 185 nC @ 10 V | ±15V | 14500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA |
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IXTH64N10L2MOSFET N-CH 100V 64A TO247 |
182 |
|
Техническая документация |
Linear L2™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 64A (Tc) | 10V | 32mOhm @ 32A, 10V | 4.5V @ 250µA | 100 nC @ 10 V | ±20V | 3620 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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SQW44N65EF-GE3E SERIES POWER MOSFET WITH FAST |
375 |
|
Техническая документация |
E | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 73mOhm @ 22A, 10V | 4V @ 250µA | 266 nC @ 10 V | ±30V | 5858 pF @ 100 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247AD |
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STW18NM80MOSFET N-CH 800V 17A TO247-3 |
564 |
|
Техническая документация |
MDmesh™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 295mOhm @ 8.5A, 10V | 5V @ 250µA | 70 nC @ 10 V | ±30V | 2070 pF @ 50 V | - | 190W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW22N95K5MOSFET N-CH 950V 17.5A TO247 |
459 |
|
Техническая документация |
SuperMESH5™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 17.5A (Tc) | 10V | 330mOhm @ 9A, 10V | 5V @ 100µA | 48 nC @ 10 V | ±30V | 1550 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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IPTG011N08NM5ATMA1MOSFET N-CH 80V 42A/408A HSOG-8 |
2,859 |
|
Техническая документация |
OptiMOS™ 5 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 42A (Ta), 408A (Tc) | 6V, 10V | 1.1mOhm @ 150A, 10V | 3.8V @ 280µA | 223 nC @ 10 V | ±20V | 17000 pF @ 40 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
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IXTQ82N25PMOSFET N-CH 250V 82A TO3P |
254 |
|
Техническая документация |
Polar | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 82A (Tc) | 10V | 35mOhm @ 41A, 10V | 5V @ 250µA | 142 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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UJ4C075044B7S750V/44MOHM, N-OFF SIC CASCODE, |
2,572 |
|
Техническая документация |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Cascode SiCJFET) | 750 V | 35.6A (Tc) | 12V | 56mOhm @ 25A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 181W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7 |
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