Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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NDH832PMOSFET P-CH 20V 4.2A SUPERSOT8 |
73,243 |
|
![]() Техническая документация |
- | 8-TSOP (0.130", 3.30mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.2A (Ta) | 2.7V, 4.5V | 60mOhm @ 4.2A, 4.5V | 1V @ 250µA | 30 nC @ 4.5 V | -8V | 1000 pF @ 10 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SuperSOT™-8 |
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2SK3617-TL-ENCH 4V DRIVE SERIES |
71,400 |
|
![]() Техническая документация |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFW740BTMN-CHANNEL POWER MOSFET |
70,400 |
|
![]() Техническая документация |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 540mOhm @ 5A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 3.13W (Ta), 134W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
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PHD71NQ03LT,118TRANSISTOR >30MHZ |
64,782 |
|
![]() Техническая документация |
TrenchMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 5V, 10V | 10mOhm @ 25A, 10V | 2.5V @ 1mA | 13.2 nC @ 5 V | ±20V | 1220 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
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ATP201-V-TL-HMOSFET N-CH 30V 35A ATPAK |
2,420 |
|
![]() Техническая документация |
- | ATPAK (2 Leads+Tab) | Tape & Reel (TR) | Obsolete | - | - | - | 35A (Tj) | - | - | - | - | - | - | - | - | 150°C (TJ) | - | - | Surface Mount | ATPAK |
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NDF04N60ZGMOSFET N-CH 600V 4.8A TO220FP |
4,050 |
|
![]() Техническая документация |
- | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.8A (Tc) | 10V | 2Ohm @ 2A, 10V | 4.5V @ 50µA | 29 nC @ 10 V | ±30V | 640 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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NTD4904N-35GMOSFET N-CH 30V 13A/79A IPAK |
2,992 |
|
![]() Техническая документация |
- | TO-251-3 Stub Leads, IPAK | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 79A (Tc) | 4.5V, 10V | 3.7mOhm @ 30A, 10V | 2.2V @ 250µA | 41 nC @ 10 V | ±20V | 3052 pF @ 15 V | - | 1.4W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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NTD4970N-35GMOSFET N-CH 30V 8.5A/36A IPAK |
8,810 |
|
![]() Техническая документация |
- | TO-251-3 Stub Leads, IPAK | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.5A (Ta), 36A (Tc) | 4.5V, 10V | 11mOhm @ 30A, 10V | 2.5V @ 250µA | 8.2 nC @ 4.5 V | ±20V | 774 pF @ 15 V | - | 1.38W (Ta), 24.6W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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HUFA75309T3STMOSFET N-CH 55V 3A SOT223-4 |
34,459 |
|
![]() Техническая документация |
UltraFET™ | TO-261-4, TO-261AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 3A (Ta) | 10V | 70mOhm @ 3A, 10V | 4V @ 250µA | 23 nC @ 20 V | ±20V | 352 pF @ 25 V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223-4 |
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ISL9N306AS3STN-CHANNEL POWER MOSFET |
33,931 |
|
![]() Техническая документация |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 6mOhm @ 75A, 10V | 3V @ 250µA | 90 nC @ 10 V | ±20V | 3400 pF @ 15 V | - | 125W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB |
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FDG330PSMALL SIGNAL FIELD-EFFECT TRANSI |
30,040 |
|
![]() Техническая документация |
PowerTrench® | 6-TSSOP, SC-88, SOT-363 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 2A (Ta) | - | 110mOhm @ 2A, 4.5V | 1.5V @ 250µA | 7 nC @ 4.5 V | ±8V | 477 pF @ 6 V | - | 480mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SC-88 (SC-70-6) |
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IRFW644BTMN-CHANNEL POWER MOSFET |
19,077 |
|
![]() Техническая документация |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 280mOhm @ 7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 3.13W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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G3404BN30V,RD(MAX)<22M@10V,RD(MAX)<35M |
14,935 |
|
![]() Техническая документация |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.6A (Tc) | 4.5V, 10V | 22mOhm @ 4.2A, 10V | 2V @ 250µA | 2.5 nC @ 10 V | ±20V | 568 pF @ 15 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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SSM3K56CT,L3FMOSFET N-CH 20V 800MA CST3 |
14,906 |
|
![]() Техническая документация |
U-MOSVII-H | SC-101, SOT-883 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 800mA (Ta) | 1.5V, 4.5V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1 nC @ 4.5 V | ±8V | 55 pF @ 10 V | - | 500mW (Ta) | 150°C (TA) | - | - | Surface Mount | CST3 |
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FSS172-TL-EPCH 4V DRIVE SERIES |
13,000 |
|
![]() Техническая документация |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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G29P15V,RD(MAX)<[email protected],RD(MAX)<4 |
12,694 |
|
![]() Техническая документация |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 15 V | 4.1A (Tc) | 2.5V, 4.5V | 30mOhm @ 3A, 4.5V | 900mV @ 250µA | 7.8 nC @ 10 V | ±12V | 740 pF @ 10 V | - | 1.05W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
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IRFD91100.7A 100V 1.200 OHM P-CHANNEL |
11,617 |
|
![]() Техническая документация |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 700mA (Ta) | 10V | 1.2Ohm @ 420mA, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip, HVMDIP |
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SSP2N60AN-CHANNEL POWER MOSFET |
9,000 |
|
![]() Техническая документация |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 5Ohm @ 1A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 410 pF @ 25 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G2305P20V,RD(MAX)<[email protected],RD(MAX)<7 |
8,918 |
|
![]() Техническая документация |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Tc) | 2.5V, 4.5V | 35mOhm @ 4.1A, 4.5V | 1V @ 250µA | 12 nC @ 4.5 V | ±12V | 1050 pF @ 10 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G2304MOSFET N-CH 30V 3.6A SOT-23 |
8,870 |
|
![]() Техническая документация |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 3.6A (Tc) | 4.5V, 10V | 39mOhm @ 1.8A, 10V | 2.2V @ 250µA | 5 nC @ 10 V | ±20V | 294 pF @ 15 V | - | 1.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |