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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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SQS420EN-T1_GE3MOSFET N-CH 20V 8A PPAK1212-8 |
12,841 |
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Техническая документация |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Tc) | 1.8V, 4.5V | 28mOhm @ 5A, 4.5V | 1.5V @ 250µA | 14 nC @ 4.5 V | ±8V | 490 pF @ 10 V | - | 18W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SQJ464EP-T1_GE3MOSFET N-CH 60V 32A PPAK SO-8 |
11,585 |
|
Техническая документация |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 32A (Tc) | 4.5V, 10V | 17mOhm @ 7.1A, 10V | 2.5V @ 250µA | 44 nC @ 10 V | ±20V | 2086 pF @ 30 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRLHM620TRPBFMOSFET N-CH 20V 26A/40A PQFN |
10,726 |
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Техническая документация |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 26A (Ta), 40A (Tc) | 2.5V, 10V | 2.5mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78 nC @ 4.5 V | ±12V | 3620 pF @ 10 V | - | 2.7W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (3x3) |
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SQJ464EP-T1_BE3N-CHANNEL 60-V (D-S) 175C MOSFET |
6,000 |
|
Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 32A (Tc) | 4.5V, 10V | 17mOhm @ 7.1A, 10V | 2.5V @ 250µA | 44 nC @ 10 V | ±20V | 2086 pF @ 30 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SQJ481EP-T1_BE3P-CHANNEL 80-V (D-S) 175C MOSFET |
5,816 |
|
Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 16A (Tc) | 4.5V, 10V | 80mOhm @ 10A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SQ4005EY-T1_GE3MOSFET P-CHANNEL 12V 15A 8SOIC |
5,479 |
|
Техническая документация |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 15A (Tc) | 2.5V, 4.5V | 22mOhm@ 13.5A, 4.5V | 1V @ 250µA | 38 nC @ 4.5 V | ±8V | 3600 pF @ 6 V | - | 6W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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BSC034N03LSGATMA1MOSFET N-CH 30V 22A/100A TDSON |
4,994 |
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Техническая документация |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.2V @ 250µA | 52 nC @ 10 V | ±20V | 4300 pF @ 15 V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-5 |
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SI3483CDV-T1-E3MOSFET P-CH 30V 8A 6TSOP |
4,598 |
|
Техническая документация |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 10V | 34mOhm @ 6.1A, 10V | 3V @ 250µA | 33 nC @ 10 V | ±20V | 1000 pF @ 15 V | - | 2W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TA) | - | - | Surface Mount | 6-TSOP |
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CSD25485F5TMOSFET P-CH 20V 5.3A 3PICOSTAR |
3,485 |
|
Техническая документация |
FemtoFET™ | 3-XFDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.3A (Ta) | 1.8V, 8V | 35mOhm @ 900mA, 8V | 1.3V @ 250µA | 3.5 nC @ 4.5 V | -12V | 533 pF @ 10 V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-PICOSTAR |
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SI2325DS-T1-BE3P-CHANNEL 150-V (D-S) MOSFET |
1,959 |
|
Техническая документация |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 150 V | 530mA (Ta) | 6V, 10V | 1.2Ohm @ 500mA, 10V | 4.5V @ 250µA | 12 nC @ 10 V | ±20V | 510 pF @ 25 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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IRFU210PBFMOSFET N-CH 200V 2.6A TO251AA |
11,306 |
|
Техническая документация |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
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TPN13008NH,L1QMOSFET N-CH 80V 18A 8TSON |
4,415 |
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Техническая документация |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 18A (Tc) | 10V | 13.3mOhm @ 9A, 10V | 4V @ 200µA | 18 nC @ 10 V | ±20V | 1600 pF @ 40 V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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SISS10DN-T1-GE3MOSFET N-CH 40V 60A PPAK 1212-8S |
2,764 |
|
Техническая документация |
TrenchFET® | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | 2.4V @ 250µA | 75 nC @ 10 V | +20V, -16V | 3750 pF @ 20 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
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CSD17302Q5AMOSFET N-CH 30V 16A/87A 8VSON |
19,753 |
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Техническая документация |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta), 87A (Tc) | 3V, 8V | 7.9mOhm @ 14A, 8V | 1.7V @ 250µA | 7 nC @ 4.5 V | +10V, -8V | 950 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSONP (5x6) |
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BSC030N03MSGATMA1MOSFET N-CH 30V 21A/100A TDSON |
10,567 |
|
Техническая документация |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 100A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2V @ 250µA | 73 nC @ 10 V | ±20V | 5700 pF @ 15 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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ZVP0545AMOSFET P-CH 450V 45MA TO92-3 |
3,115 |
|
Техническая документация |
- | TO-226-3, TO-92-3 (TO-226AA) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 450 V | 45mA (Ta) | 10V | 150Ohm @ 50mA, 10V | 4.5V @ 1mA | - | ±20V | 120 pF @ 25 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92 |
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STD6N65M2MOSFET N-CH 650V 4A DPAK |
1,792 |
|
Техническая документация |
MDmesh™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4A (Tc) | 10V | 1.35Ohm @ 2A, 10V | 4V @ 250µA | 9.8 nC @ 10 V | ±25V | 226 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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SQS407ENW-T1_GE3MOSFET P-CH 30V 16A PPAK1212-8W |
27,453 |
|
Техническая документация |
TrenchFET® | PowerPAK® 1212-8W | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Tc) | 4.5V, 10V | 10.8mOhm @ 12A, 10V | 2.5V @ 250µA | 77 nC @ 10 V | ±20V | 4572 pF @ 20 V | - | 62.5W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® 1212-8W |
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TK40S06N1L,LXHQMOSFET N-CH 60V 40A DPAK |
6,970 |
|
Техническая документация |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 4.5V, 10V | 18mOhm @ 20A, 10V | 2.5V @ 200µA | 26 nC @ 10 V | ±20V | 1650 pF @ 10 V | - | 88.2W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
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SQ4431EY-T1_GE3MOSFET P-CH 30V 10.8A 8SO |
6,312 |
|
Техническая документация |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10.8A (Tc) | 10V | 30mOhm @ 6A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 1265 pF @ 15 V | - | 6W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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