Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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R6004RND3TL1600V 4A TO-252, PRESTOMOS WITH I |
2,700 |
|
![]() Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 15V | 1.73Ohm @ 2A, 15V | 7V @ 450µA | 10.5 nC @ 15 V | ±30V | 230 pF @ 100 V | - | 60W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
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TK5P60W5,RVQPB-F POWER MOSFET TRANSISTOR DPA |
2,000 |
|
![]() Техническая документация |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Ta) | 10V | 990mOhm @ 2.3A, 10V | 4.5V @ 230µA | 11.5 nC @ 10 V | ±30V | 370 pF @ 300 V | - | 60W (Tc) | 150°C | - | - | Surface Mount | DPAK |
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TJ10S04M3L(T6L1,NQMOSFET P-CH 40V 10A DPAK |
1,895 |
|
![]() Техническая документация |
U-MOSVI | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 6V, 10V | 44mOhm @ 5A, 10V | 3V @ 1mA | 19 nC @ 10 V | +10V, -20V | 930 pF @ 10 V | - | 27W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
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STD3NK50ZT4MOSFET N-CH 500V 2.3A DPAK |
1,870 |
|
![]() Техническая документация |
SuperMESH™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.3A (Tc) | 10V | 3.3Ohm @ 1.15A, 10V | 4.5V @ 50µA | 15 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK5P53D(T6RSS-Q)MOSFET N-CH 525V 5A DPAK |
1,710 |
|
![]() Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 525 V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 80W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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BUK9Y4R8-60RAXBUK9Y4R8-60RA/SOT669/LFPAK |
1,500 |
|
![]() Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NVTFS6H854NLWFTAGMOSFET N-CH 80V 10A/41A 8WDFN |
1,454 |
|
![]() Техническая документация |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 10A (Ta), 41A (Tc) | 4.5V, 10V | 13.4mOhm @ 10A, 10V | 2V @ 45µA | 17 nC @ 10 V | ±20V | 902 pF @ 40 V | - | 3.2W (Ta), 54W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-WDFN (3.3x3.3) |
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NVTFS6H854NLTAGMOSFET N-CH 80V 10A/41A 8WDFN |
1,270 |
|
![]() Техническая документация |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 10A (Ta), 41A (Tc) | 4.5V, 10V | 13.4mOhm @ 10A, 10V | 2V @ 45µA | 17 nC @ 10 V | ±20V | 902 pF @ 40 V | - | 3.2W (Ta), 54W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-WDFN (3.3x3.3) |
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DIT100N10MOSFET TO220AB N 100V 0.0099OHM |
997 |
|
![]() Техническая документация |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 13mOhm @ 40A, 10V | 4V @ 250µA | 85 nC @ 10 V | ±20V | 4800 pF @ 50 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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PJP100N06SA-AU_T0_006A160V N-CHANNEL ENHANCEMENT MODE M |
990 |
|
![]() Техническая документация |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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TJ20S04M3L(T6L1,NQMOSFET P-CH 40V 20A DPAK |
935 |
|
![]() Техническая документация |
U-MOSVI | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Ta) | 6V, 10V | 22.2mOhm @ 10A, 10V | 3V @ 1mA | 37 nC @ 10 V | +10V, -20V | 1850 pF @ 10 V | - | 41W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
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MCAC65N06YHE3-TPMOSFET N-CH 60 65A DFN5060 |
7,261 |
|
![]() Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 4.5V, 10V | 5.2mOhm @ 20A, 10V | 2.5V @ 250µA | 34.5 nC @ 10 V | ±20V | 1740 pF @ 30 V | - | 100W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DFN5060 |
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MCAC95N04YHE3-TPMOSFET N-CH 40 95A DFN5060 |
5,000 |
|
![]() Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 95A (Tc) | 6V, 10V | 3.2mOhm @ 20A, 10V | 4V @ 250µA | 27.7 nC @ 10 V | ±20V | 1709 pF @ 20 V | - | 75W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DFN5060 |
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NVMYS3D5N04CTWGMOSFET N-CH 40V 24A/102A LFPAK4 |
2,954 |
|
![]() Техническая документация |
- | SOT-1023, 4-LFPAK | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 24A (Ta), 102A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 3.5V @ 60µA | 23 nC @ 10 V | ±20V | 1600 pF @ 25 V | - | 3.6W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | LFPAK4 (5x6) |
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SI4894BDY-T1-GE3MOSFET N-CH 30V 8.9A 8SO |
2,500 |
|
![]() Техническая документация |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.9A (Ta) | 4.5V, 10V | 11mOhm @ 12A, 10V | 3V @ 250µA | 38 nC @ 10 V | ±20V | 1580 pF @ 15 V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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NVTFS5C460NLTAGMOSFET N-CH 40V 19A/74A 8WDFN |
1,210 |
|
![]() Техническая документация |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 19A (Ta), 74A (Tc) | 4.5V, 10V | 4.8mOhm @ 35A, 10V | 2V @ 40µA | 11 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-WDFN (3.3x3.3) |
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SIRA54DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 |
5,980 |
|
![]() Техническая документация |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.35mOhm @ 15A, 10V | 2.3V @ 250µA | 48 nC @ 4.5 V | +20V, -16V | 5300 pF @ 20 V | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
STP3NK60ZMOSFET N-CH 600V 2.4A TO220AB |
4,867 |
|
![]() Техническая документация |
SuperMESH™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.4A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4.5V @ 50µA | 11.8 nC @ 10 V | ±30V | 311 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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ISZ330N12LM6ATMA1OPTIMOS 6 POWER-TRANSISTOR,120V |
3,719 |
|
![]() Техническая документация |
OptiMOS™ 6 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 5.7A (Ta), 24A (Tc) | 3.3V, 10V | 33mOhm @ 9A, 10V | 2.2V @ 11µA | 10.1 nC @ 10 V | ±20V | 650 pF @ 60 V | - | 2.5W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 FL |
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PJD40P03E-AU_L2_006A130V P-CHANNEL ENHANCEMENT MODE M |
3,000 |
|
![]() Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta), 33A (Tc) | 4.5V, 10V | 18.8mOhm @ 20A, 10V | 2.5V @ 250µA | 22 nC @ 10 V | ±25V | 1009 pF @ 25 V | - | 3W (Ta), 33W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |