+86-0755-83179664
FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ISC320N12LM6ATMA1TRENCH >=100V |
4,930 |
|
Техническая документация |
OptiMOS™ 6 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 6.4A (Ta), 24A (Tc) | 3.3V, 10V | 32mOhm @ 9A, 10V | 2.2V @ 11µA | 10.1 nC @ 10 V | ±20V | 650 pF @ 60 V | - | 3W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | SuperSO8 |
|
|
DMT64M2LPSW-13MOSFET N-CH 60V 20.7A/100A PWRDI |
2,412 |
|
Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20.7A (Ta), 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 50A, 10V | 2.5V @ 250µA | 46.7 nC @ 10 V | ±20V | 2799 pF @ 30 V | - | 2.8W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerDI5060-8 (Type Q) |
|
NVTYS010N06CLTWGT6 60V N-CH LL IN LFPAK33 |
2,065 |
|
Техническая документация |
- | SOT-1205, 8-LFPAK56 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Ta), 51A (Tc) | 4.5V, 10V | 9.8mOhm @ 25A, 10V | 2V @ 35µA | 13 nC @ 10 V | ±20V | 910 pF @ 25 V | - | 3.1W (Ta), 47W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-LFPAK |
|
|
IAUCN04S6N017TATMA1MOSFET_(20V 40V) |
1,367 |
|
Техническая документация |
OptiMOS™ 6 | 10-LSOP (0.216", 5.48mm Width) Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 58A (Ta), 120A (Tj) | 7V, 10V | 1.73mOhm @ 60A, 10V | 3V @ 40µA | 49 nC @ 10 V | ±20V | 3250 pF @ 25 V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-LHDSO-10-1 |
|
DIT150N03MOSFET TO220AB N 30V 0.0023OHM |
986 |
|
Техническая документация |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 2.5V @ 250µA | 38 nC @ 10 V | ±20V | 5000 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
SIR5211DP-T1-GE3P-CHANNEL 20 V (D-S) MOSFET POWE |
5,995 |
|
Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 31.2A (Ta), 105A (Tc) | 2.5V, 10V | 3.2mOhm @ 10A, 10V | 1.5V @ 250µA | 158 nC @ 10 V | ±12V | 6700 pF @ 10 V | - | 5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIJA72ADP-T1-GE3MOSFET N-CH 40V 27.9A/96A PPAK |
5,528 |
|
Техническая документация |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 27.9A (Ta), 96A (Tc) | 4.5V, 10V | 3.42mOhm @ 10A, 10V | 2.4V @ 250µA | 50 nC @ 10 V | +20V, -16V | 2530 pF @ 20 V | - | 4.8W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
DI110N04PQ-AQMOSFET, POWERQFN 5X6, 40V, 110A, |
4,787 |
|
Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 4.5V, 10V | 2.5mOhm @ 23A, 10V | 2.5V @ 250µA | 48 nC @ 10 V | ±20V | 2980 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-QFN (5x6) |
|
|
PSMN2R5-40YLBXPSMN2R5-40YLB/SOT669/LFPAK |
1,500 |
|
Техническая документация |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.5V, 10V | 2.6mOhm @ 25A, 10V | 2.05V @ 1mA | 79 nC @ 10 V | ±20V | 5627 pF @ 20 V | Schottky Diode (Body) | 147W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
|
|
PSMN2R8-40YSBXPSMN2R8-40YSB/SOT669/LFPAK |
1,500 |
|
Техническая документация |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 2.8mOhm @ 25A, 10V | 3.6V @ 1mA | 59 nC @ 10 V | ±20V | 4563 pF @ 20 V | Schottky Diode (Body) | 147W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
|
|
IPA60R600P7SE8228XKSA1MOSFET N-CH 600V 6A TO220 |
420 |
|
Техническая документация |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9 nC @ 10 V | ±20V | 363 pF @ 400 V | - | 21W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
BUK7Y15-60EXMOSFET N-CH 60V 53A LFPAK56 |
164 |
|
Техническая документация |
TrenchMOS™ | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 53A (Tc) | 10V | 15mOhm @ 15A, 10V | 4V @ 1mA | 24.5 nC @ 10 V | ±20V | 1838 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | LFPAK56, Power-SO8 |
|
|
SIJA58ADP-T1-GE3MOSFET N-CH 40V 32.3A/109A PPAK |
5,185 |
|
Техническая документация |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 32.3A (Ta), 109A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | 2.4V @ 250µA | 61 nC @ 10 V | +20V, -16V | 3030 pF @ 20 V | - | 5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
TPN4R303NL,L1QMOSFET N-CH 30V 40A 8TSON |
4,990 |
|
Техническая документация |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 4.3mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8 nC @ 10 V | ±20V | 1400 pF @ 15 V | - | 700mW (Ta), 34W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
|
|
PJQ5526-AU_R2_002A130V N-CHANNEL (LL) SGT MOSFET |
3,000 |
|
Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
PJQ5433E_R2_0020130V P-CHANNEL STANDARD TRENCH MO |
3,000 |
|
Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
PJD45N06SA-AU_L2_006A160V N-CHANNEL ENHANCEMENT MODE M |
2,970 |
|
Техническая документация |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
NVTYS005N04CLTWGT6 40V N-CH LL IN LFPAK33 |
2,714 |
|
Техническая документация |
- | SOT-1205, 8-LFPAK56 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 19A (Ta), 75A (Tc) | 4.5V, 10V | 4.8mOhm @ 35A, 10V | 2V @ 40µA | 23.1 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-LFPAK |
|
|
MCU011N10YL-TPPOWER MOSFET |
2,480 |
|
Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Tc) | 4.5V, 10V | 11mOhm @ 20A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±20V | 1380 pF @ 50 V | - | 83W (Tj) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
NVMFS027N10MCLT1GPTNG 100V LL SO8FL |
5,550 |
|
Техническая документация |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.9A (Ta), 28A (Tc) | 4.5V, 10V | 26mOhm @ 7A, 10V | 3V @ 38µA | 11.5 nC @ 10 V | ±20V | 800 pF @ 50 V | - | 3.5W (Ta), 46W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
Связаться с нами
Получите больше информации о продукте!
- Низкие цены каждый день, беззаботный выбор
- Аутентичные лицензионные товары
- Доставка напрямую из нескольких складов, быстрая доставка
- Полный ассортимент для легких покупок
