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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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SIA110DJ-T1-GE3MOSFET N-CH 100V 5.4A/12A PPAK |
5,330 |
|
Техническая документация |
TrenchFET® Gen IV | PowerPAK® SC-70-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.4A (Ta), 12A (Tc) | 7.5V, 10V | 55mOhm @ 4A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 550 pF @ 50 V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SC-70-6 |
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SIS108DN-T1-GE3MOSFET N-CH 80V 6.7A/16A PPAK |
5,000 |
|
Техническая документация |
TrenchFET® Gen IV | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 6.7A (Ta), 16A (Tc) | 7.5V, 10V | 34mOhm @ 4A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 545 pF @ 40 V | - | 3.2W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
|
MCAC47N10Y-TPMOSFET N-CH 100 47A DFN5060 |
4,990 |
|
Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 47A (Tc) | 10V | 12mOhm @ 20A, 10V | 4V @ 250µA | 23 nC @ 10 V | ±20V | 1255 pF @ 50 V | - | 68W (Tj) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DFN5060 |
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IPA60R1K0CEXKSA1MOSFET N-CH 600V 6.8A TO220 |
336 |
|
Техническая документация |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 26W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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SISS28DN-T1-GE3MOSFET N-CH 25V 60A PPAK1212-8S |
5,980 |
|
Техническая документация |
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 60A (Tc) | 4.5V, 10V | 1.52mOhm @ 15A, 10V | 2V @ 250µA | 35 nC @ 4.5 V | +20V, -16V | 3640 pF @ 10 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
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MCQ12N03HE3-TPPOWER MOSFET |
4,000 |
|
Техническая документация |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 6.5mOhm @ 12A, 10V | 2.5V @ 250µA | 22 nC @ 10 V | ±20V | 978 pF @ 25 V | - | 1.9W (Tj) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOP |
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NVMYS8D0N04CTWGMOSFET N-CH 40V 16A/49A 4LFPAK |
3,000 |
|
Техническая документация |
- | SOT-1023, 4-LFPAK | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 16A (Ta), 49A (Tc) | 10V | 8.1mOhm @ 15A, 10V | 3.5V @ 30µA | 10 nC @ 10 V | ±20V | 625 pF @ 25 V | - | 3.8W (Ta), 38W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | LFPAK4 (5x6) |
|
DIT095N08MOSFET TO220AB N 80V 0.0066OHM |
1,000 |
|
Техническая документация |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 95A (Tc) | 10V | 8mOhm @ 40A, 10V | 4V @ 250µA | 109 nC @ 10 V | ±20V | 6800 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
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XP9561GHMOSFET P-CH 40V 45A TO252 |
990 |
|
Техническая документация |
XP9561 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 45A (Tc) | 4.5V, 10V | 16mOhm @ 30A, 10V | 3V @ 250µA | 40 nC @ 4.5 V | ±20V | 2720 pF @ 25 V | - | 54.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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PJQ5476AL-AU_R2_000A1100V N-CHANNEL ENHANCEMENT MODE |
152 |
|
Техническая документация |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6.5A (Ta), 42A (Tc) | 4.5V, 10V | 25mOhm @ 20A, 10V | 2.5V @ 250µA | 31 nC @ 10 V | ±20V | 1519 pF @ 30 V | - | 2W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DFN5060-8 |
|
|
AONR66620N |
8,500 |
|
Техническая документация |
AlphaSGT™ | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17.5A (Ta), 24A (Tc) | 8V, 10V | 9.1mOhm @ 20A, 10V | 3.6V @ 250µA | 25 nC @ 10 V | ±20V | 1070 pF @ 30 V | - | 5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN-EP (3x3) |
|
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SISC06DN-T1-GE3MOSFET N-CH 30V 27.6A/40A PPAK |
5,745 |
|
Техническая документация |
TrenchFET® Gen IV | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 27.6A (Ta), 40A (Tc) | 4.5V, 10V | 2.7mOhm @ 15A, 10V | 2.1V @ 250µA | 58 nC @ 10 V | +20V, -16V | 2455 pF @ 15 V | - | 3.7W (Ta), 46.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
|
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MCAC88N04YHE3-TPMOSFET N-CH 40 88A DFN5060 |
4,685 |
|
Техническая документация |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 88A (Tc) | 6V, 10V | 4.5mOhm @ 20A, 10V | 4V @ 250µA | 15.6 nC @ 10 V | ±20V | 861 pF @ 25 V | - | 68W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DFN5060 |
|
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PJQ4433EP-AU_R2_002A130V P-CHANNEL ENHANCEMENT MODE M |
4,435 |
|
Техническая документация |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 13.3A (Ta), 68A (Tc) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2.5V @ 250µA | 54 nC @ 10 V | ±25V | 2310 pF @ 25 V | - | 2.5W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DFN3333-8 |
|
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R6003JND4TL1600V 1.3A SOT-223-3, PRESTOMOS W |
3,980 |
|
Техническая документация |
- | TO-261-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.3A (Tc) | 15V | 2.15Ohm @ 1.5A, 15V | 7V @ 300µA | 8 nC @ 15 V | ±30V | 180 pF @ 100 V | - | 7.8W (Tc) | 150°C (TJ) | - | - | Surface Mount | SOT-223-3 |
|
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SIHFU9220-GE3MOSFET P-CH 200V 3.6A TO251AA |
2,955 |
|
Техническая документация |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 3.6A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
|
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PJQ4546VP-AU_R2_002A140V N-CHANNEL ENHANCEMENT MODE M |
2,590 |
|
Техническая документация |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 15A (Ta), 61A (Tc) | 7V, 10V | 6.3mOhm @ 15A, 10V | 3.5V @ 50µA | 23 nC @ 10 V | ±20V | 1283 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DFN3333-8 |
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RRH050P03TB1MOSFET P-CH 30V 5A 8SOP |
2,455 |
|
Техническая документация |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 5A (Ta) | 4V, 10V | 50mOhm @ 5A, 10V | 2.5V @ 1mA | 9.2 nC @ 5 V | ±20V | 850 pF @ 10 V | - | 650mW (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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IPD60R360P7SE8228AUMA1MOSFET N-CH 600V 9A TO252-3 |
2,354 |
|
Техническая документация |
CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13 nC @ 10 V | ±20V | 555 pF @ 400 V | - | 41W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
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PSMN3R2-40YLBXPSMN3R2-40YLB/SOT669/LFPAK |
1,500 |
|
Техническая документация |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 3.3mOhm @ 25A, 10V | 2.05V @ 1mA | 59 nC @ 10 V | ±20V | 4211 pF @ 20 V | Schottky Diode (Body) | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
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