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FET, MOSFET
| Фото | Парт. № производителя | Наличие | Количество | Техническая документация | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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SIE848DF-T1-E3MOSFET N-CH 30V 60A 10POLARPAK |
8,045 |
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Техническая документация |
TrenchFET® | 10-PolarPAK® (L) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 1.6mOhm @ 25A, 10V | 2.5V @ 250µA | 138 nC @ 10 V | ±20V | 6100 pF @ 15 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (L) |
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SIE854DF-T1-E3MOSFET N-CH 100V 60A 10POLARPAK |
6,915 |
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Техническая документация |
TrenchFET® | 10-PolarPAK® (L) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 14.2mOhm @ 13.2A, 10V | 4.4V @ 250µA | 75 nC @ 10 V | ±20V | 3100 pF @ 50 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (L) |
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SIE876DF-T1-GE3MOSFET N-CH 60V 60A 10POLARPAK |
8,438 |
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Техническая документация |
TrenchFET® | 10-PolarPAK® (L) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 6.1mOhm @ 20A, 10V | 4.4V @ 250µA | 77 nC @ 10 V | ±20V | 3100 pF @ 30 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (L) |
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SIHF8N50L-E3MOSFET N-CH 500V 8A TO220 |
3,447 |
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Техническая документация |
- | TO-220-3 Full Pack | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 1Ohm @ 4A, 10V | 5V @ 250µA | 34 nC @ 0 V | ±30V | 873 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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SIJ400DP-T1-GE3MOSFET N-CH 30V 32A PPAK SO-8 |
5,921 |
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Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.5V @ 250µA | 150 nC @ 10 V | ±20V | 7765 pF @ 15 V | - | 5W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIJ484DP-T1-GE3MOSFET N-CH 30V 35A PPAK SO-8 |
9,265 |
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Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 6.3mOhm @ 10A, 10V | 2.5V @ 250µA | 45 nC @ 10 V | ±20V | 1600 pF @ 15 V | - | 5W (Ta), 27.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIJ800DP-T1-GE3MOSFET N-CH 40V 20A PPAK SO-8 |
2,560 |
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Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Tc) | 4.5V, 10V | 9.5mOhm @ 20A, 10V | 3V @ 250µA | 56 nC @ 10 V | ±20V | 2400 pF @ 20 V | - | 4.2W (Ta), 35.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIR168DP-T1-GE3MOSFET N-CH 30V 40A PPAK SO-8 |
7,009 |
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Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 4.4mOhm @ 15A, 10V | 2.4V @ 250µA | 75 nC @ 10 V | ±20V | 2040 pF @ 15 V | - | 5W (Ta), 34.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIR406DP-T1-GE3MOSFET N-CH 25V 40A PPAK SO-8 |
9,365 |
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Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 40A (Tc) | 4.5V, 10V | 3.8mOhm @ 15A, 10V | 2.4V @ 250µA | 50 nC @ 10 V | ±20V | 2083 pF @ 10 V | - | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIR432DP-T1-GE3MOSFET N-CH 100V 28.4A PPAK SO-8 |
7,796 |
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Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 28.4A (Tc) | 7.5V, 10V | 30.6mOhm @ 8.6A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 1170 pF @ 50 V | - | 5W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIR436DP-T1-GE3MOSFET N-CH 25V 40A PPAK SO-8 |
8,889 |
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Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 40A (Tc) | 4.5V, 10V | 4.6mOhm @ 20A, 10V | 3V @ 250µA | 47 nC @ 10 V | ±20V | 1715 pF @ 15 V | - | 5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIR494DP-T1-GE3MOSFET N-CH 12V 60A PPAK SO-8 |
3,054 |
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Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 60A (Tc) | 4.5V, 10V | 1.2mOhm @ 20A, 10V | 2.5V @ 250µA | 150 nC @ 10 V | ±20V | 6900 pF @ 6 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIR874DP-T1-GE3MOSFET N-CH 25V 20A PPAK SO-8 |
2,605 |
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Техническая документация |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 20A (Tc) | 4.5V, 10V | 9.4mOhm @ 10A, 10V | 2.2V @ 250µA | 27 nC @ 10 V | ±20V | 985 pF @ 15 V | - | 3.9W (Ta), 29.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQ2319ES-T1-GE3MOSFET P-CH 40V 4.6A TO-236 |
9,864 |
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Техническая документация |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 4.6A (Tc) | - | 75mOhm @ 3A, 10V | 2.5V @ 250µA | 16 nC @ 10 V | - | 620 pF @ 25 V | - | - | - | - | - | Surface Mount | SOT-23-3 (TO-236) |
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SQ7002K-T1-GE3MOSFET N-CH 60V 320MA SOT23-3 |
7,504 |
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Техническая документация |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 320mA (Tc) | 4.5V, 10V | 1.3Ohm @ 500mA, 10V | 2.5V @ 250µA | 1.4 nC @ 4.5 V | ±20V | 24 pF @ 30 V | - | 500mW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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SQD40N06-25L-GE3MOSFET N-CH 60V 30A TO252 |
5,928 |
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Техническая документация |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 22mOhm @ 20A, 10V | 3V @ 250µA | 40 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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SQD45N05-20L-GE3MOSFET N-CH 50V 50A TO252 |
5,131 |
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Техническая документация |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 50A (Tc) | 4.5V, 10V | 18mOhm @ 20A, 10V | 2.5V @ 250µA | 43 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 2.5W (Ta), 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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SQD50N04-09H-GE3MOSFET N-CH 40V 50A TO252 |
5,869 |
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Техническая документация |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | - | 9mOhm @ 20A, 10V | 5V @ 250µA | 76 nC @ 10 V | - | 4240 pF @ 25 V | - | - | - | - | - | Surface Mount | TO-252AA |
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SQM110P04-04L-GE3MOSFET P-CH 40V 120A TO263 |
3,955 |
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Техническая документация |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.5V @ 250µA | 330 nC @ 10 V | ±20V | 13980 pF @ 20 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SQM40N10-30_GE3MOSFET N-CH 100V 40A TO263 |
8,166 |
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Техническая документация |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 6V, 10V | 30mOhm @ 15A, 10V | 3.5V @ 250µA | 62 nC @ 10 V | ±20V | 3345 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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